Noguchi et al., 1998 - Google Patents
Fabrication of x-ray mask from a diamond membrane and its evaluationNoguchi et al., 1998
- Document ID
- 4522962374893280774
- Author
- Noguchi H
- Kubota Y
- Okada I
- Oda M
- Matsuda T
- Motoyoshi A
- Ohki S
- Yoshihara H
- Publication year
- Publication venue
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
External Links
Snippet
We have prepared a diamond membrane x-ray mask using our novel fabrication techniques which include fluidized bed pretreatment, stress control of diamond film, and chemical- mechanical polishing (CMP), and we have evaluated its important properties for practical …
- 229910003460 diamond 0 title abstract description 53
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/708—Construction of apparatus, e.g. environment, hygiene aspects or materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0532968B1 (en) | Projection type x-ray lithography apparatus | |
| Harriott | Scattering with angular limitation projection electron beam lithography for suboptical lithography | |
| US7736821B2 (en) | Reflective mask blank for EUV lithography and substrate with a conductive film for the mask blank | |
| US5188706A (en) | Method of manufacturing an x-ray exposure mask and device for controlling the internal stress of thin films | |
| US6833223B2 (en) | Multilayer-film reflective mirrors and optical systems comprising same | |
| Silverman | Challenges and progress in x-ray lithography | |
| Smith et al. | X-ray lithography from 500 to 30 nm: X-ray nanolithography | |
| US20040067420A1 (en) | Reduced-stress, electrostatically chuckable reticles for use in extreme ultraviolet and soft X-ray microlithography apparatus and methods | |
| Schattenburg et al. | Fabrication of high-energy x-ray transmission gratings for the Advanced X-ray Astrophysics Facility (AXAF) | |
| US5012500A (en) | X-ray mask support member, X-ray mask, and X-ray exposure process using the X-ray mask | |
| US4994141A (en) | Method of manufacturing a mask support of SiC for radiation lithography masks | |
| US4634643A (en) | X-ray mask and method of manufacturing the same | |
| US5375157A (en) | X-ray mask structure and a production method thereof, an exposure method using the X-ray mask structure, and a device fabricated by using the X-ray mask structure | |
| US20070054196A1 (en) | Fabrication method of extreme ultraviolet radiation mask mirror using atomic force microscope lithography | |
| Noguchi et al. | Fabrication of x-ray mask from a diamond membrane and its evaluation | |
| US4467026A (en) | Process for drawing patterns with extremely fine features in the production of VLSI, LSI and IC systems | |
| Watanabe et al. | Fine pattern replication using ETS-1 three-aspherical mirror imaging system | |
| Hamamoto et al. | Characteristics of CA resist in EUV lithography | |
| Silverman et al. | Fabrication of fully scaled 0.5‐μm n‐type metal–oxide semiconductor test devices using synchrotron x‐ray lithography: Overlay, resist processes, and device fabrication | |
| EP0536635B1 (en) | X-ray mask, method of manufacturing the same and exposure method using the mask | |
| Liddle et al. | Error budget analysis of the SCALPEL (R) mask for sub‐0.2 μm lithography | |
| Ravet et al. | Evaluation of a diamond‐based x‐ray mask for high resolution x‐ray proximity lithography | |
| Visser et al. | The development of a silicon nitride mask technology for synchrotron radiation X-ray lithography | |
| Wasson et al. | Extreme ultraviolet mask fabrication with high inspection contrast TaSiN x absorber stack | |
| Shimkunas et al. | Mask technology for x-ray step-and-repeat system |