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Jung et al., 2009 - Google Patents

32 nm Half Pitch Formation with High-Numerical-Aperture Single Exposure

Jung et al., 2009

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Document ID
4497220829871222813
Author
Jung M
Park J
Oh H
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

Abstract According to the International Technology Roadmap for Semiconductors (ITRS), memory half pitch (hp) will reach 32 and 20 nm by 2012 and 2017, respectively. However, it is difficult to fabricate a sub-40 nm node using single-exposure technology with the currently …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

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