Lee et al., 2017 - Google Patents
Low-temperature-grown KNbO3 thin films and their application to piezoelectric nanogenerators and self-powered ReRAM deviceLee et al., 2017
- Document ID
- 4482191540773872094
- Author
- Lee T
- Hwang H
- Jang S
- Wang G
- Han S
- Kim D
- Kang C
- Nahm S
- Publication year
- Publication venue
- ACS applied materials & interfaces
External Links
Snippet
Amorphous KNbO3 (KN) film containing KN nanocrystals was grown on TiN/SiO2/Si substrate at 350° C. This KN film showed a dielectric constant (εr) and a piezoelectric strain constant (d 33) of 43 and 80 pm/V at 10 V, respectively, owing to the existence of KN …
- 229910003334 KNbO3 0 title abstract description 196
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/16—Selection of materials
- H01L41/18—Selection of materials for piezo-electric or electrostrictive devices, e.g. bulk piezo-electric crystals
- H01L41/187—Ceramic compositions, i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
- H01L41/31—Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/08—Piezo-electric or electrostrictive devices
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Lee et al. | Low-temperature-grown KNbO3 thin films and their application to piezoelectric nanogenerators and self-powered ReRAM device | |
| Yang et al. | Flexible, temperature-resistant, and fatigue-free ferroelectric memory based on Bi (Fe0. 93Mn0. 05Ti0. 02) O3 thin film | |
| Tang et al. | Multiaxial molecular ferroelectric thin films bring light to practical applications | |
| Paskiewicz et al. | Single-crystalline SrRuO3 nanomembranes: a platform for flexible oxide electronics | |
| Kim et al. | Ionically-mediated electromechanical hysteresis in transition metal oxides | |
| Wang et al. | Chemical-pressure-modulated BaTiO3 thin films with large spontaneous polarization and high curie temperature | |
| Liu et al. | Significantly enhanced energy-harvesting performance and superior fatigue-resistant behavior in [001] c-textured BaTiO3-based lead-free piezoceramics | |
| Luo et al. | Domain evolution and piezoelectric response across thermotropic phase boundary in (K, Na) NbO3-based epitaxial thin films | |
| Su et al. | Flexible, fatigue-free, and large-scale Bi3. 25La0. 75Ti3O12 ferroelectric memories | |
| Lv et al. | High-performance 0-3 type niobate-based lead-free piezoelectric composite ceramics with ZnO inclusions | |
| Zhang et al. | Flexible Metal–Insulator Transitions Based on van der Waals Oxide Heterostructures | |
| Zhao et al. | Recoverable self-polarization in lead-free bismuth sodium titanate piezoelectric thin films | |
| Lv et al. | Multiscale structure engineering for high-performance Pb-free piezoceramics | |
| Gao et al. | Transparent, flexible, fatigue-free, optical-read, and nonvolatile ferroelectric memories | |
| Baek et al. | Nonvolatile memory devices prepared from sol–gel derived niobium pentoxide films | |
| Kim et al. | High‐performance (Na0. 5K0. 5) NbO3 thin film piezoelectric energy Harvester | |
| Varghese et al. | Fabrication of arrays of lead zirconate titanate (PZT) nanodots via block copolymer self-assembly | |
| Ma et al. | Transparent antiradiative ferroelectric heterostructure based on flexible oxide heteroepitaxy | |
| Takahashi et al. | Sacrificial water-soluble BaO layer for fabricating free-standing piezoelectric membranes | |
| Li et al. | Decoding Thermal Depolarization Temperature in Bismuth Ferrite–Barium Titanate Relaxor Ferroelectrics with Large Strain Response | |
| Han et al. | Enhanced metal–insulator transition in freestanding VO2 down to 5 nm thickness | |
| Kweon et al. | Physical Properties of (Na1–x K x) NbO3 Thin Film Grown at Low Temperature Using Two-Dimensional Ca2Nb3O10 Nanosheet Seed Layer | |
| Yousry et al. | Structure and high performance of lead-free (K0. 5Na0. 5) NbO3 piezoelectric nanofibers with surface-induced crystallization at lowered temperature | |
| Cheng et al. | All-inorganic flexible (K, Na) NbO3-based lead-free piezoelectric thin films spin-coated on metallic foils | |
| Cho et al. | Electric-field-dependent surface potentials and vibrational energy-harvesting characteristics of Bi (Na0. 5Ti0. 5) O3-based Pb-free piezoelectric thin films |