Tang et al., 2019 - Google Patents
Enhanced solvent resistance and electrical performance of electrohydrodynamic jet printed PEDOT: PSS composite patterns: effects of hardeners on the performance …Tang et al., 2019
- Document ID
- 4326432455861635613
- Author
- Tang X
- Kwon H
- Ye H
- Kim J
- Lee J
- Jeong Y
- Kim S
- Publication year
- Publication venue
- Physical Chemistry Chemical Physics
External Links
Snippet
Poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonic acid)(PEDOT: PSS) is of great interest as a promising metal-free electrode material for future electronic devices. Several printing techniques have been developed to generate PEDOT: PSS patterns. In this study …
- 229920000144 PEDOT:PSS 0 title abstract description 123
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0516—Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric
- H01L51/052—Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0541—Lateral single gate single channel transistors with non inverted structure, i.e. the organic semiconductor layer is formed before the gate electode
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
- H01L51/0048—Carbon nanotubes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0001—Processes specially adapted for the manufacture or treatment of devices or of parts thereof
- H01L51/0021—Formation of conductors
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0001—Processes specially adapted for the manufacture or treatment of devices or of parts thereof
- H01L51/0002—Deposition of organic semiconductor materials on a substrate
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/10—Details of devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
- H01L51/0052—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0034—Organic polymers or oligomers
- H01L51/0035—Organic polymers or oligomers comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline, polyphenylene, polyphenylene vinylene
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Tang et al. | Enhanced solvent resistance and electrical performance of electrohydrodynamic jet printed PEDOT: PSS composite patterns: effects of hardeners on the performance of organic thin-film transistors | |
US8389346B2 (en) | Method and structure for establishing contacts in thin film transistor devices | |
Li et al. | Direct writing of silver nanowire electrodes via dragging mode electrohydrodynamic jet printing for organic thin film transistors | |
US20120256166A1 (en) | Deposition of nanoparticles | |
JP2009283786A (en) | Organic semiconductor composition | |
KR102027362B1 (en) | Semiconductor composition | |
KR20110056505A (en) | Surface treated substrates for top gate organic thin film transistors | |
CA2880662C (en) | Cnt thin film transistor with high k polymeric dielectric | |
Li et al. | The effect of surfactants on electrohydrodynamic jet printing and the performance of organic field-effect transistors | |
Li et al. | Electrohydrodynamic (EHD) jet printing of carbon-black composites for solution-processed organic field-effect transistors | |
US20170141332A1 (en) | Organic transistor | |
Park et al. | Optimization of electrohydrodynamic-printed organic electrodes for bottom-contact organic thin film transistors | |
Kwon et al. | Highly stable flexible organic field-effect transistors with Parylene-C gate dielectrics on a flexible substrate | |
Park et al. | Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes | |
JP2009260346A (en) | Organic thin film transistor | |
Wu et al. | Screen printing of silver nanoparticles on the source/drain electrodes of organic thin-film transistors | |
Chai et al. | Solution-processed organic field-effect transistors using directed assembled carbon nanotubes and 2, 7-dioctyl [1] benzothieno [3, 2-b][1] benzothiophene (C8-BTBT) | |
Kim et al. | Top-gate staggered poly (3, 3 ″′-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes | |
Kwon et al. | A 6, 13-bis (Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric | |
JP5715664B2 (en) | Organic semiconductor composition | |
Li et al. | Facile method for enhancing conductivity of printed carbon nanotubes electrode via simple rinsing process | |
KR20180105985A (en) | Organic photovoltaics and method for manufacturing the same | |
WO2009098477A1 (en) | Method of fabricating top gate organic semiconductor transistors | |
KR20200053663A (en) | CNT semiconductor layer contained conjugated polymer binder, Preparing thereof and Thin-film transistor using the same | |
US9000423B2 (en) | Processing additive for single-component solution processed organic field-effect transistors |