Bellingeri et al., 2000 - Google Patents

Classifications

• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
  • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
  • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
  • H01L39/2422—Processes for depositing or forming superconductor layers
  • H01L39/2454—Processes for depositing or forming superconductor layers characterised by the substrate
  • H01L39/2461—Intermediate layers, e.g. for growth control
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
  • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
  • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
  • H01L39/2422—Processes for depositing or forming superconductor layers
  • H01L39/2454—Processes for depositing or forming superconductor layers characterised by the substrate
  • H01L39/2458—Monocrystalline substrates, e.g. epitaxial growth
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
  • H01L39/02—Details
  • H01L39/12—Details characterised by the material
  • H01L39/125—Ceramic materials
  • H01L39/126—Ceramic materials comprising copper oxide
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
  • H01L39/22—Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
  • H01L39/223—Josephson-effect devices
  • H01L39/225—Josephson-effect devices comprising high Tc ceramic materials
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/10—Inorganic compounds or compositions
  • C30B29/16—Oxides
  • C30B29/22—Complex oxides
  • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
  • C23C14/087—Oxides of copper or solid solutions thereof
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B23/00—Single-crystal growth by condensing evaporated or sublimed material
  • C30B23/02—Epitaxial-layer growth

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