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Asbeck et al., 1997 - Google Patents

Piezoelectric charge densities in AlGaN/GaN HFETs

Asbeck et al., 1997

Document ID
4284273109662931950
Author
Asbeck P
Yu E
Lau S
Sullivan G
Van Hove J
Redwing J
Publication year
Publication venue
Electronics letters

External Links

Snippet

New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of~ 5× 1013 cm–2· xAl (where xAl is the aluminium mol …
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