[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Jarlborg et al., 2016 - Google Patents

Breakdown of the Migdal approximation at Lifshitz transitions with giant zero-point motion in the H3S superconductor

Jarlborg et al., 2016

View HTML
Document ID
4150888271342756704
Author
Jarlborg T
Bianconi A
Publication year
Publication venue
Scientific reports

External Links

Snippet

While 203 K high temperature superconductivity in H3S has been interpreted by BCS theory in the dirty limit here we focus on the effects of hydrogen zero-point-motion and the multiband electronic structure relevant for multigap superconductivity near Lifshitz …
Continue reading at www.nature.com (HTML) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/02—Details
    • H01L39/12—Details characterised by the material

Similar Documents

Publication Publication Date Title
Jarlborg et al. Breakdown of the Migdal approximation at Lifshitz transitions with giant zero-point motion in the H3S superconductor
Chadov et al. Tunable multifunctional topological insulators in ternary Heusler compounds
Okazaki et al. Superconductivity in an electron band just above the Fermi level: possible route to BCS-BEC superconductivity
Narayan et al. Multiferroic quantum criticality
Fujioka et al. Strong-correlation induced high-mobility electrons in Dirac semimetal of perovskite oxide
Hao et al. Topological quantum states of matter in iron-based superconductors: from concept to material realization
King et al. Atomic-scale control of competing electronic phases in ultrathin LaNiO3
Liu et al. Nearly massless Dirac fermions hosted by Sb square net in BaMnSb2
Pan et al. Electric control of topological phase transitions in Dirac semimetal thin films
Xia et al. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
Ishikawa et al. Superconducting H5S2 phase in sulfur-hydrogen system under high-pressure
Sato et al. Unexpected mass acquisition of Dirac fermions at the quantum phase transition of a topological insulator
Sharma et al. Comprehensive review on topological superconducting materials and interfaces
Matsubara et al. Observation of the quantum Hall effect in δ-doped SrTiO3
Pariari et al. Coexistence of topological Dirac fermions on the surface and three-dimensional Dirac cone state in the bulk of ZrTe5 single crystal
Abdel-Hafiez et al. Enhancement of superconductivity under pressure and the magnetic phase diagram of tantalum disulfide single crystals
Doennig et al. Control of orbital reconstruction in (LaAlO3) M/(SrTiO3) N (001) quantum wells by strain and confinement
Sun et al. Large Zeeman splitting induced anomalous Hall effect in ZrTe5
Sengupta et al. Design principles for HgTe based topological insulator devices
Bansal et al. Magnetically driven phonon instability enables the metal–insulator transition in h-FeS
Mera Acosta et al. Zeeman-type spin splitting in nonmagnetic three-dimensional compounds
Niu et al. Realization of tunable Dirac cone and insulating bulk states in topological insulators (Bi1− xSbx) 2Te3
Dong et al. Electrically tunable multiple Dirac cones in thin films of the (LaO) 2 (SbSe2) 2 family of materials
Cheng et al. Pressure-induced superconductivity and topological phase transitions in the topological nodal-line semimetal SrAs3
Iida et al. Hall-plot of the phase diagram for Ba (Fe1− x Co x) 2As2