[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Fukui et al., 1981 - Google Patents

Organometallic VPE growth of InAs1-x-ySbxPy on InAs

Fukui et al., 1981

Document ID
4110655040465589613
Author
Fukui T
Horikoshi Y
Publication year
Publication venue
Japanese Journal of Applied Physics

External Links

Snippet

InAs 1-xy Sb x P y quaternary alloy lattice matched to InAs was successfully grown by organometallic vapor phase epitaxial growth. In a fairly wide composition range (0≦ x+y≦ 0.7) the grown quaternary layer exhibited a mirror-smooth surface and a sharp X-ray …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Similar Documents

Publication Publication Date Title
Fukui et al. Organometallic VPE growth of InAs1-x-ySbxPy on InAs
Bedair et al. Atomic layer epitaxy of III‐V binary compounds
US3751310A (en) Germanium doped epitaxial films by the molecular beam method
Razeghi et al. Low pressure metalorganic chemical vapor deposition of InP and related compounds
US5168077A (en) Method of manufacturing a p-type compound semiconductor thin film containing a iii-group element and a v-group element by metal organics chemical vapor deposition
Koide et al. Epitaxial Growth and Properties of Al x Ga1− x N by MOVPE
Haywood et al. Growth of GaSb by MOVPE; Optimization of electrical quality with respect to growth rate, pressure, temperature and IIIV ratio
Fukui et al. InAsSbP-InAs superlattice grown by organometallic VPE method
Hino et al. MOCVD growth of (AlxGa1− x) yIn1− yP and double heterostructures for visible light lasers
US4504331A (en) Silicon dopant source in intermetallic semiconductor growth operations
Shibata et al. Iodine-doped low-resistivity n-type ZnSe films grown by MOVPE
Pascal et al. Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide
Dobbelaere et al. Growth and optical characterization of InAs1− x Sb x (0≤ x≤ 1) on GaAs and on GaAs‐coated Si by molecular beam epitaxy
Tischler et al. Improved uniformity of epitaxial indium‐based compounds by atomic layer epitaxy
Sugou et al. Conditions for OMVPE growth of GaInAsP/InP crystal
Bedair et al. GaAsP-GaInAsSb superlattices: A new structure for electronic devices
Razeghi et al. Two‐dimensional electron gases in quantum well and superlattices of Ga0. 25In0. 75As0. 50P0. 50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition
Huang et al. Growth and properties of InAsP alloys prepared by organometallic vapor phase epitaxy
Clawson et al. Effects of hydrogen-only interrupts on InGaAs/InP superlattices grown by OMVPE
Nataf et al. Epitaxial growth of InAs1− xSbx alloys by MOCVD
Scriven et al. The growth of Zn3As2 on InP by atmospheric pressure MOVPE
Ludowise et al. Use of column V alkyls in organometallic vapor phase epitaxy (OMVPE)
Kimura et al. Low-pressure OMVPE of GaAs using triethylgallium
Husain et al. Epitaxial Lattice Matching and the Growth Techniques of Compound Semiconductors for their Potential Photovoltaic Applications
Juang et al. Growth and properties of GaSb, Ga1-xInxSb and Ga1-xAlxSb epilayers by MOCVD