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Agarwal et al., 1997 - Google Patents

A 277-GHz f max transferred-substrate heterojunction bipolar transistor

Agarwal et al., 1997

Document ID
4077960824734184537
Author
Agarwal B
Mensa D
Pullela R
Lee Q
Bhattacharya U
Samoska L
Guthrie J
Rodwell M
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

We report a AlInAs-GaInAs transferred-substrate heterojunction bipolar transistor (HBT). The transferred-substrate process permits fabrication of narrow and aligned collector-base and emitter-base junctions, reducing the collector-base capacitance and increasing the device f …
Continue reading at ieeexplore.ieee.org (other versions)

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