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Compact low voltage high-Q CMOS active inductor suitable for RF applications

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Abstract

A compact active inductor circuit is proposed. The circuit is based on the gyrator-C approach with both transconductance stages realized by MOS transistors in common-source configuration. The circuit has minimal number of transistors, is suitable for low voltage operation, offers a wide inductive band, high quality factor and low power dissipation. Simulation results are provided for a 0.13 μm CMOS process with 1.2 V supply voltage.

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Authors and Affiliations

  1. Electronics and Communication Engineering Department, Istanbul Technical University, Maslak, Istanbul, 34469, Turkey

    H. Ugur Uyanik & Nil Tarim

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  1. H. Ugur Uyanik
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  2. Nil Tarim
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Correspondence to Nil Tarim.

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Uyanik, H.U., Tarim, N. Compact low voltage high-Q CMOS active inductor suitable for RF applications. Analog Integr Circ Sig Process 51, 191–194 (2007). https://doi.org/10.1007/s10470-007-9065-5

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  • DOI: https://doi.org/10.1007/s10470-007-9065-5

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