Abstract
This chapter exhaustively explores the prospects of III-Nitride-based High Electron Mobility Transistors (HEMTs) for THz applications. III-Nitride binary semiconductors include AlN, GaN, and InN, having bandgaps of 6.2 eV, 3.4 eV, and 0.7 eV, respectively, which create heterostructures with its high bandgap alloys leading to the formation of 2DEG (two-dimensional electron gas). The 2DEG is created at the heterojunction due to the discontinuity of conduction energy band leading to the formation of quantum well (QW). The electrons present in the 2DEG/QW do not experience any scattering effects, resulting in high electron mobility. The field-effect transistor with high electron mobility is called HEMT, which is a potential candidate for high-power and high-frequency electronic applications. This chapter goes over a full investigation of THz generation and its performance characteristics such as noise power and THz detector response. This attribute has a significant impact on device sensitivity. It may be deduced from prior studies that reducing noise improves the device's sensitivity significantly. Hence, in this piece of work, the THz capability of this device is presented.
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Acknowledgements
The authors acknowledge DST (Department of Science and Technology)-SERB (Science and Engineering Research Board), Govt. of India sponsored Mathematical Research Impact Centric Support (MATRICS) project no. MTR/2021/000370 for support.
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Manta, J., Rao, G.P., Lenka, T.R., Choudhury, M., Nguyen, H.P.T. (2022). III-Nitride HEMTs for THz Applications. In: Das, S., Nella, A., Patel, S.K. (eds) Terahertz Devices, Circuits and Systems. Springer, Singapore. https://doi.org/10.1007/978-981-19-4105-4_9
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DOI: https://doi.org/10.1007/978-981-19-4105-4_9
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