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View all- Traeger AZadok EJoukov NWright C(2008)A nine year study of file system and storage benchmarkingACM Transactions on Storage10.1145/1367829.13678314:2(1-56)Online publication date: 28-May-2008
Display Omitted MOCVD Co films as Cu seed replacement are deposited using CCTBA precursor.Impact of different film properties on cobalt resistivity is evaluated and modeled.Resistivity increase at low film thicknesses is mainly caused by surface ...
Cobalt xanthate thin films (CXTFs) were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate). The structure of the films was analyzed by ...
Amorphous cobalt-phosphorus alloy is grown on SiO"2 and Cu by chemical vapor deposition from dicobaltoctacarbonyl and trimethylphosphine at 250^oC, 300^oC, and 350^oC. Film properties most relevant to adoption into back-end chip fabrication have been ...
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