A high-power multi-port 0.46THz radiation source in nano-scale silicon technology using fundamental-frequency oscillation beyond fMAX of transistors
Article No.: 26, Pages 1 - 6
Abstract
A silicon-integrated vertical IMPATT (V-IMPATT) diode is introduced and its implementation in a silicon-germanium (SiGe) BiCMOS process is presented. The device exhibits active behavior and negative resistance at > 400GHz, far above the fMAX of transistors in that technology node. Furthermore, it provides much higher output power compared to transistor-based harmonic power generation thanks to operation in breakdown region with much larger allowable voltage swing compared to transistors. As a result, using this device, generation of high oscillation power is enabled in nano-scale silicon process. In addition, a four-port on-chip cavity-backed antenna structure, as a multi-port resonator,power-combiner, and antenna is vertically integrated with four V-IMPATT devices to build a silicon-integrated 0.46THz radiation source, demonstrating 10.5dBm total radiated power and 18.5dBm EIRP.
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Published: 27 September 2017
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NANOCOM '17
NANOCOM '17: ACM The Fourth Annual International Conference on Nanoscale Computing and Communication
September 27 - 29, 2017
D.C., Washington
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