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Radiation-Induced Soft Error Analysis of SRAMs in SOI FinFET Technology: A Device to Circuit Approach

Authors:

Thomas Osiecki,

Sani NassifAuthors Info & Claims

DAC '14: Proceedings of the 51st Annual Design Automation Conference

Pages 1 - 6

https://doi.org/10.1145/2593069.2593196

Published: 01 June 2014 Publication History

Abstract

This paper presents a comprehensive analysis of radiation-induced soft errors of SRAMs designed in SOI FinFET technology. For this purpose, we propose a cross layer approach starting from a 3D simulation of particle interactions in FinFET structures up to circuit level analysis by considering the layout of the memory array. This approach enables us to consider the effect of different factors such as supply voltage and process variation on Soft Error Rate (SER) of FinFET SRAM memory arrays. Our analysis shows that proton-induced soft errors are becoming important and comparable to the SER induced by alpha-particles especially for low supply voltages (low power applications). Moreover, we observe that the ratio of Multiple Bit Upset (MBU) to Single Event Upset (SEU) for alpha-particle radiation is much higher than that of proton.

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Cited By

Mukku PLorenzo R(2023)Double Node Upset Immune RHBD-14T SRAM Cell for Space and Satellite ApplicationsIEEE Access10.1109/ACCESS.2023.331057011(96256-96271)Online publication date: 2023
https://doi.org/10.1109/ACCESS.2023.3310570
Yaqing CPengcheng HQian SBin LZhenyu Z(2022)Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-nm Bulk FinFET SRAMsIEEE Transactions on Nuclear Science10.1109/TNS.2021.312756769:5(1176-1181)Online publication date: May-2022
https://doi.org/10.1109/TNS.2021.3127567
Pavan Kumar MLorenzo R(2022)A review on radiation‐hardened memory cells for space and terrestrial applicationsInternational Journal of Circuit Theory and Applications10.1002/cta.342951:1(475-499)Online publication date: 7-Sep-2022
https://doi.org/10.1002/cta.3429
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Published In

cover image ACM Other conferences

DAC '14: Proceedings of the 51st Annual Design Automation Conference

June 2014

1249 pages

ISBN:9781450327305

DOI:10.1145/2593069

Copyright © 2014 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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EDAC: Electronic Design Automation Consortium
SIGBED: ACM Special Interest Group on Embedded Systems
SIGDA: ACM Special Interest Group on Design Automation
IEEE-CEDA

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Association for Computing Machinery

New York, NY, United States

Publication History

Published: 01 June 2014

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DAC '14

DAC '14: The 51st Annual Design Automation Conference 2014

June 1 - 5, 2014

CA, San Francisco, USA

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Overall Acceptance Rate 1,770 of 5,499 submissions, 32%

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Cited By

Mukku PLorenzo R(2023)Double Node Upset Immune RHBD-14T SRAM Cell for Space and Satellite ApplicationsIEEE Access10.1109/ACCESS.2023.331057011(96256-96271)Online publication date: 2023
https://doi.org/10.1109/ACCESS.2023.3310570
Yaqing CPengcheng HQian SBin LZhenyu Z(2022)Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-nm Bulk FinFET SRAMsIEEE Transactions on Nuclear Science10.1109/TNS.2021.312756769:5(1176-1181)Online publication date: May-2022
https://doi.org/10.1109/TNS.2021.3127567
Pavan Kumar MLorenzo R(2022)A review on radiation‐hardened memory cells for space and terrestrial applicationsInternational Journal of Circuit Theory and Applications10.1002/cta.342951:1(475-499)Online publication date: 7-Sep-2022
https://doi.org/10.1002/cta.3429
Ren ZAn XLi GLiu JZhang XHuang R(2021)New Concerns on Heavy Ion Irradiation Induced Variation Degradation in Nanoscale CMOS DevicesIEEE Transactions on Electron Devices10.1109/TED.2021.306069568:4(2142-2146)Online publication date: Apr-2021
https://doi.org/10.1109/TED.2021.3060695
Zimpeck AMeinhardt CArtola LReis RZimpeck AMeinhardt CArtola LReis R(2021)Reliability Challenges in FinFETsMitigating Process Variability and Soft Errors at Circuit-Level for FinFETs10.1007/978-3-030-68368-9_3(29-63)Online publication date: 4-Jan-2021
https://doi.org/10.1007/978-3-030-68368-9_3
Rajendiran PNagarajan KSrinivasan R(2020)Investigation of heavy-ion strikes on a fin field-effect transistor-based low-noise amplifierSemiconductor Science and Technology10.1088/1361-6641/abc1fe35:12(125028)Online publication date: 24-Nov-2020
https://doi.org/10.1088/1361-6641/abc1fe
Li JDraper J(2017)Accelerated Soft-Error-Rate (SER) Estimation for Combinational and Sequential CircuitsACM Transactions on Design Automation of Electronic Systems10.1145/303549622:3(1-21)Online publication date: 25-May-2017
https://dl.acm.org/doi/10.1145/3035496
Trang Dang LKim JChang I(2017)We-Quatro: Radiation-Hardened SRAM Cell With Parametric Process Variation ToleranceIEEE Transactions on Nuclear Science10.1109/TNS.2017.272818064:9(2489-2496)Online publication date: Sep-2017
https://doi.org/10.1109/TNS.2017.2728180
Lee HAl Faruque M(2017)GPU Architecture Aware Instruction Scheduling for Improving Soft-Error ReliabilityIEEE Transactions on Multi-Scale Computing Systems10.1109/TMSCS.2017.26676613:2(86-99)Online publication date: 1-Apr-2017
https://doi.org/10.1109/TMSCS.2017.2667661
Riera MCanal RAbella JGonzalez AFanucci LTeich J(2016)A detailed methodology to compute soft error rates in advanced technologiesProceedings of the 2016 Conference on Design, Automation & Test in Europe10.5555/2971808.2971856(217-222)Online publication date: 14-Mar-2016
https://dl.acm.org/doi/10.5555/2971808.2971856
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