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research-article

Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation

Published: 01 March 2013 Publication History

Abstract

In this study, we simulate double-gate MOSFET using a 2-D direct Boltzmann transport equation solver. Simulation results are interpreted by quasi-ballistic theory. It is found that the relation between average carrier velocity at virtual source and back-scattering coefficient needs to be modified due to the oversimplified approximations of the original model. A 1-D potential profile model also needs to be extended to better determine the kT-layer length. The key expression for back-scattering coefficient is still valid, but a field-dependent mean free path is needed to be taken into account.

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  • (2016)Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTEJournal of Computational Electronics10.1007/s10825-016-0818-115:3(770-777)Online publication date: 1-Sep-2016

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cover image IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology  Volume 12, Issue 2
March 2013
165 pages

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IEEE Press

Publication History

Published: 01 March 2013

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  • (2016)Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTEJournal of Computational Electronics10.1007/s10825-016-0818-115:3(770-777)Online publication date: 1-Sep-2016

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