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research-article

Reducing Transistor Variability for High Performance Low Power Chips

Published: 01 March 2013 Publication History

Abstract

CMOS integrated-circuit supply-voltage reduction has plateaued in recent years as increased transistor variability has limited transistor-threshold voltage scaling. The deeply depleted channel transistor, implemented on bulk CMOS, provides a low-cost option to re-enable voltage scaling on both future and legacy CMOS fabrication processes by reducing random variability and providing a strong body factor to pull in systematic variation and compensate for environmental effects resulting in 50 percent lower power at matched performance.

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  • (2019)TEI-ULP: Exploiting Body Biasing to Improve the TEI-Aware Ultralow Power MethodsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2018.285924038:9(1758-1770)Online publication date: 19-Aug-2019
  1. Reducing Transistor Variability for High Performance Low Power Chips

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    Published In

    cover image IEEE Micro
    IEEE Micro  Volume 33, Issue 2
    March 2013
    55 pages

    Publisher

    IEEE Computer Society Press

    Washington, DC, United States

    Publication History

    Published: 01 March 2013

    Author Tags

    1. CMOS
    2. CMOS integrated circuits
    3. DDC
    4. Random access memory
    5. Threshold voltage
    6. Transistors
    7. VLSI
    8. Voltage control
    9. body bias
    10. deeply depleted channel transistor
    11. low power
    12. undoped channel transistor
    13. voltage scaling

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    • (2019)TEI-ULP: Exploiting Body Biasing to Improve the TEI-Aware Ultralow Power MethodsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2018.285924038:9(1758-1770)Online publication date: 19-Aug-2019

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