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A Fast Characterizing Method for Large Embedded Memory Modules on SoC

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Masayuki TeraiAuthors Info & Claims

IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, Volume E90-A, Issue 4

Pages 815 - 822

https://doi.org/10.1093/ietfec/e90-a.4.815

Published: 15 April 2007 Publication History

Abstract

This paper proposes a new efficient method of characterizing a memory compiler in order to reduce the computation time and remove human error. The new features that make our method greatly efficient are the following three points: (1) high-speed circuit simulation of the whole memory module using a hierarchical LPE (Layout Parasitic Extractor) and a hierarchical circuit simulator, (2) automatic generation of circuit simulation input data from corresponding parameterized description termed the template file, and (3) carefully selected environmental conditions of circuit level simulator and minimizing the number of runs of it. We demonstrate the effectiveness of the proposed method by application to the single-port SRAM generators using 90 nm CMOS technology.

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A Fast Characterizing Method for Large Embedded Memory Modules on SoC

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cover image IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences

IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences Volume E90-A, Issue 4

April 2007

180 pages

ISSN:0916-8508

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Oxford University Press, Inc.

United States

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Published: 15 April 2007

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Characterizing flash memory: anomalies, observations, and applications

Using adaptive read voltage thresholds to enhance the reliability of MLC NAND flash memory systems

High density STT-MRAM compiler design, validation and characterization methodology in 28nm FDSOI technology

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Recommendations

Characterizing flash memory: anomalies, observations, and applications

Using adaptive read voltage thresholds to enhance the reliability of MLC NAND flash memory systems

High density STT-MRAM compiler design, validation and characterization methodology in 28nm FDSOI technology

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