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research-article

Electrical characteristics of Si_0.7Ge_0.3/Si heterostructure-based n-type GAA MOSFETs

Authors:

Kuei-Shu Chang-Liao,

Pramod Kumar TiwariAuthors Info & Claims

Volume 292, Issue C

https://doi.org/10.1016/j.mee.2024.112226

Published: 19 September 2024 Publication History

Abstract

Electrical characteristics of Si_0.7Ge_0.3/Si heterostructure-based n-type gate-all-around MOSFETs (GAA MOSFETs) are reported in this work through experimental and numerical simulation data. N-type GAA MOSFETs of varying lengths (60 nm to 160 nm) and widths (20 nm to 42 nm) are fabricated and measured to extract key electrical parameters like ON current, ON-to-OFF current ratio, threshold voltage, DIBL, and subthreshold swing. Moreover, the influence of tensile strain on carrier transport parameters in the buried Si layer is examined in this work. The Ge mole fraction in SiGe is raised from 0.2 to 0.3, and the corresponding changes in XX-stress, and current density are analyzed using a TCAD simulator. The performance of the proposed device has also been compared with unstrained SiGe/Si, all Si, and SiGe-based GAA MOSFETs.

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Electrical characteristics of Si_0.7Ge_0.3/Si heterostructure-based n-type GAA MOSFETs

Index terms have been assigned to the content through auto-classification.

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Published In

cover image Microelectronic Engineering

Microelectronic Engineering Volume 292, Issue C

Sep 2024

100 pages

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Elsevier B.V.

Publisher

Elsevier Science Ltd.

United Kingdom

Publication History

Published: 19 September 2024

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