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View all- Huang TWong M(2016)UI-Timer 1.0IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2016.252456635:11(1862-1875)Online publication date: 1-Nov-2016
This work analyzes the power-performance of the emerging Ultra-Thin-Body (UTB) GeOI devices for logic circuit applications. The impacts of temperature and Vdd scaling on the leakage/delay are studied. Compared with the subthreshold leakage dominated SOI ...
Aggressive technology scaling as per Moore's law has led to elevated power dissipation levels owing to an exponential increase in subthreshold leakage power. Short channel effects (SCEs) due to channel length reduction, gate insulator thickness change, ...
In this paper we examined the short channel behavior of junction less tunnel field effect transistor (JLTFET) and a comparison was made with the conventional MOSFET on the basis of variability of device parameter. The JLTFET is a heavily doped ...
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