research-article

SARO: A State-Aware Reliability Optimization Technique for High Density NAND Flash Memory

Authors:

Myungsuk Kim,

Youngsun Song,

Myoungsoo Jung,

Jihong KimAuthors Info & Claims

GLSVLSI '18: Proceedings of the 2018 Great Lakes Symposium on VLSI

Pages 255 - 260

https://doi.org/10.1145/3194554.3194591

Published: 30 May 2018 Publication History

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Abstract

Recent advances in flash technologies, such as scaling and multi-leveling schemes, have been successful to make flash denser and secure more storage spaces per die. Unfortunately, these technology advances significantly degrade flash's reliability due to a smaller cell geometry and a finer-grained cell state control. In this paper, we propose a state-aware reliability optimization technique SARO), new flash optimization that improves the flash reliability under diverse scaling and multi-leveling schemes. To this end, we first reveal that reliability-related flash errors are highly skewed among flash cell states, which was not captured by prior studies. The proposed SARO exploits then the different per-state error behavior in flash cell states by selecting the most error-prone flash states (for each error type) and by forming narrow threshold voltage distributions(for the selected states only). Furthermore, SARO is applied only when the program time gets shorter because of flash cell aging, thereby keeping the program latency unchanged. Our experimental results with real MLC and TLC flash devices show that SARO can reduce a significant number of flash bit errors, which can in turn reduce the read latency by 40%, on average.

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Cited By

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Kim M(2024)HAIPO: Hybrid AI Algorithm-Based Post-Fabrication Optimization for Modern 3D NAND Flash MemoryProcesses10.3390/pr1212276012:12(2760)Online publication date: 4-Dec-2024
https://doi.org/10.3390/pr12122760
Kim BKim M(2023)LazyRS: Improving the Performance and Reliability of High-Capacity TLC/QLC Flash-Based Storage Systems Using Lazy ReprogrammingElectronics10.3390/electronics1204084312:4(843)Online publication date: 7-Feb-2023
https://doi.org/10.3390/electronics12040843
Wu WHsieh JKu H(2023)CDS: Coupled Data Storage to Enhance Read Performance of 3D TLC NAND Flash MemoryIEEE Transactions on Computers10.1109/TC.2023.333847473:3(694-707)Online publication date: 7-Dec-2023
https://dl.acm.org/doi/10.1109/TC.2023.3338474
Show More Cited By

Index Terms

SARO: A State-Aware Reliability Optimization Technique for High Density NAND Flash Memory
1. Computer systems organization
  1. Embedded and cyber-physical systems
    1. Embedded systems
2. Hardware
  1. Emerging technologies
    1. Analysis and design of emerging devices and systems
  2. Integrated circuits
    1. Semiconductor memory
      1. Non-volatile memory

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Information & Contributors

Information

Published In

GLSVLSI '18: Proceedings of the 2018 Great Lakes Symposium on VLSI

May 2018

533 pages

ISBN:9781450357241

DOI:10.1145/3194554

General Chair:
Deming Chen
University of Illinois, USA
,
Program Chairs:
Houman Homayoun
George Mason University, USA
,
Baris Taskin
Drexel University, USA

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Association for Computing Machinery

New York, NY, United States

Publication History

Published: 30 May 2018

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Funding Sources

Samsung Research Funding & Incubation Center of Samsung Electronics

Conference

GLSVLSI '18

Sponsor:

SIGDA

GLSVLSI '18: Great Lakes Symposium on VLSI 2018

May 23 - 25, 2018

IL, Chicago, USA

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GLSVLSI '18 Paper Acceptance Rate 48 of 197 submissions, 24%;

Overall Acceptance Rate 312 of 1,156 submissions, 27%

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Cited By

View all

Kim M(2024)HAIPO: Hybrid AI Algorithm-Based Post-Fabrication Optimization for Modern 3D NAND Flash MemoryProcesses10.3390/pr1212276012:12(2760)Online publication date: 4-Dec-2024
https://doi.org/10.3390/pr12122760
Kim BKim M(2023)LazyRS: Improving the Performance and Reliability of High-Capacity TLC/QLC Flash-Based Storage Systems Using Lazy ReprogrammingElectronics10.3390/electronics1204084312:4(843)Online publication date: 7-Feb-2023
https://doi.org/10.3390/electronics12040843
Wu WHsieh JKu H(2023)CDS: Coupled Data Storage to Enhance Read Performance of 3D TLC NAND Flash MemoryIEEE Transactions on Computers10.1109/TC.2023.333847473:3(694-707)Online publication date: 7-Dec-2023
https://dl.acm.org/doi/10.1109/TC.2023.3338474
Park JAzizi ROliveira GSadrosadati MNadig RNovo DGómez-Luna JKim MMutlu OHardavellas NCampanoni SGrot BKarpuzcu U(2022)Flash-Cosmos: In-Flash Bulk Bitwise Operations Using Inherent Computation Capability of NAND Flash MemoryProceedings of the 55th Annual IEEE/ACM International Symposium on Microarchitecture10.1109/MICRO56248.2022.00069(937-955)Online publication date: 1-Oct-2022
https://dl.acm.org/doi/10.1109/MICRO56248.2022.00069
Nie SWu WZhang C(2021)Data Pattern Aware Reliability Enhancement Scheme for 3D Solid-State DrivesACM Transactions on Embedded Computing Systems10.1145/347700020:5s(1-20)Online publication date: 17-Sep-2021
https://doi.org/10.1145/3477000
Kim MChun MHong DKim YCho GLee DKim J(2021)RealWearACM SIGMETRICS Performance Evaluation Review10.1145/3453953.345398048:3(120-121)Online publication date: 5-Mar-2021
https://dl.acm.org/doi/10.1145/3453953.3453980
Hong DHa KKo MChun MKim YLee SKim J(2021)Reparo: A Fast RAID Recovery Scheme for Ultra-large SSDsACM Transactions on Storage10.1145/345097717:3(1-24)Online publication date: 16-Aug-2021
https://dl.acm.org/doi/10.1145/3450977
Kim MChun MHong DKim YCho GLee DKim J(2021)RealWear: Improving performance and lifetime of SSDs using a NAND aging markerPerformance Evaluation10.1016/j.peva.2020.102153145(102153)Online publication date: Jan-2021
https://doi.org/10.1016/j.peva.2020.102153

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