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A Monte Carlo analysis of a write method used in passive nanoelectronic crossbars

Published: 04 July 2012 Publication History

Abstract

The performance of a method for robustly writing conductive states into resistive switches is analyzed. The focus is set on the variability of the conductance distribution which has a strong impact on the signal margin and the robustness of the circuit performance. In order to be able to capture cycle-to-cycle as well as device-to-device variability an existing device model for ECM cells was extended and prepared to be executable on standard circuit simulation platforms. The ECM devices were embedded into a passive crossbar whereby electrical worst case conditions were identified by Monte Carlo simulations. Under the constraint of specified signal margins to be maintained for the read operation the underlying write circuit was optimized.

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Cited By

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  • (2017)Mixing circuit based on neural associative memories and nanoelectronic 1S1R cells2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)10.1109/NANOARCH.2017.8053707(119-124)Online publication date: Jul-2017
  • (2014)Variability analysis of a hybrid CMOS/RS nanoelectronic calibration circuit2014 IEEE International Symposium on Circuits and Systems (ISCAS)10.1109/ISCAS.2014.6865470(1656-1659)Online publication date: Jun-2014
  • (2013)Modeling variability and irreproducibility of nanoelectronic resistive switches for circuit simulation2013 18th Asia and South Pacific Design Automation Conference (ASP-DAC)10.1109/ASPDAC.2013.6509646(503-508)Online publication date: Jan-2013

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  1. A Monte Carlo analysis of a write method used in passive nanoelectronic crossbars

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        cover image ACM Conferences
        NANOARCH '12: Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures
        July 2012
        243 pages
        ISBN:9781450316712
        DOI:10.1145/2765491
        Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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        Publication History

        Published: 04 July 2012

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        Author Tags

        1. Monte Carlo simulation
        2. circuit simulation
        3. electrochemical metallization
        4. memristor
        5. nanoelectronics
        6. passive crossbar
        7. resistive switch
        8. signal margin
        9. variability
        10. write operation

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        • (2017)Mixing circuit based on neural associative memories and nanoelectronic 1S1R cells2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)10.1109/NANOARCH.2017.8053707(119-124)Online publication date: Jul-2017
        • (2014)Variability analysis of a hybrid CMOS/RS nanoelectronic calibration circuit2014 IEEE International Symposium on Circuits and Systems (ISCAS)10.1109/ISCAS.2014.6865470(1656-1659)Online publication date: Jun-2014
        • (2013)Modeling variability and irreproducibility of nanoelectronic resistive switches for circuit simulation2013 18th Asia and South Pacific Design Automation Conference (ASP-DAC)10.1109/ASPDAC.2013.6509646(503-508)Online publication date: Jan-2013

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