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A SPICE model of flexible transition metal dichalcogenide field-effect transistors

Authors:

Deming ChenAuthors Info & Claims

DAC '15: Proceedings of the 52nd Annual Design Automation Conference

Article No.: 140, Pages 1 - 6

https://doi.org/10.1145/2744769.2744782

Published: 07 June 2015 Publication History

Abstract

This paper presents the first SPICE model of the transition metal dichalcogenide (TMD) field-effect transistor (FET), which is a promising candidate for flexible electronics. The model supports different transistor design parameters such as width, length, oxide thickness, and various channel materials (MoS₂, WSe₂, etc.), as well as the applied strain, which enables the evaluation of transistor- and circuit-level behavior under process variation and different levels of bending. We performed SPICE simulations on digital logic gates to explore the design space of both MoS₂- and WSe₂-based transistors, and to evaluate the projected performance of these circuits under applied strain. Our simulations show that WSe₂ circuits outperform MoS₂ and Si-based CMOS in terms of energy-delay product (EDP) by 1 order of magnitude or more, depending on applications. Finally, we investigate TMDFET's behavior under process variation.

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Cited By

Crippa PBiagetti GMinelli LTurchetti CAldrigo MDragoman MMencarelli DPierantoni L(2022)Next-Generation Hybrid RF Front-End with MoS2-FET Supply Management Circuit, CNT-FET Amplifiers, and Graphene Thin-Film AntennasElectronics10.3390/electronics1122370811:22(3708)Online publication date: 12-Nov-2022
https://doi.org/10.3390/electronics11223708
Ma SWang YChen XWu TWang XTang HYao YYu HSheng YMa JRen JBao W(2020) Analog Integrated Circuits Based on Wafer-Level Two-Dimensional MoS 2 Materials With Physical and SPICE Model IEEE Access10.1109/ACCESS.2020.30343218(197287-197299)Online publication date: 2020
https://doi.org/10.1109/ACCESS.2020.3034321
Wei BLu C(2018)Transition metal dichalcogenide MoS 2 field-effect transistors for analog circuits: A simulation studyAEU - International Journal of Electronics and Communications10.1016/j.aeue.2018.02.02588(110-119)Online publication date: May-2018
https://doi.org/10.1016/j.aeue.2018.02.025
Show More Cited By

Index Terms

A SPICE model of flexible transition metal dichalcogenide field-effect transistors
1. Applied computing
  1. Physical sciences and engineering
    1. Electronics
2. Hardware

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Published In

cover image ACM Conferences

DAC '15: Proceedings of the 52nd Annual Design Automation Conference

June 2015

1204 pages

ISBN:9781450335201

DOI:10.1145/2744769

Copyright © 2015 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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SIGDA: ACM Special Interest Group on Design Automation

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New York, NY, United States

Publication History

Published: 07 June 2015

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National Science Foundation

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DAC '15

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SIGDA

DAC '15: The 52nd Annual Design Automation Conference 2015

June 7 - 11, 2015

California, San Francisco

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Overall Acceptance Rate 1,770 of 5,499 submissions, 32%

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Cited By

Crippa PBiagetti GMinelli LTurchetti CAldrigo MDragoman MMencarelli DPierantoni L(2022)Next-Generation Hybrid RF Front-End with MoS2-FET Supply Management Circuit, CNT-FET Amplifiers, and Graphene Thin-Film AntennasElectronics10.3390/electronics1122370811:22(3708)Online publication date: 12-Nov-2022
https://doi.org/10.3390/electronics11223708
Ma SWang YChen XWu TWang XTang HYao YYu HSheng YMa JRen JBao W(2020) Analog Integrated Circuits Based on Wafer-Level Two-Dimensional MoS 2 Materials With Physical and SPICE Model IEEE Access10.1109/ACCESS.2020.30343218(197287-197299)Online publication date: 2020
https://doi.org/10.1109/ACCESS.2020.3034321
Wei BLu C(2018)Transition metal dichalcogenide MoS 2 field-effect transistors for analog circuits: A simulation studyAEU - International Journal of Electronics and Communications10.1016/j.aeue.2018.02.02588(110-119)Online publication date: May-2018
https://doi.org/10.1016/j.aeue.2018.02.025
Chen YGholipour MChen D(2016)Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC)10.1109/ASPDAC.2016.7428103(761-768)Online publication date: Jan-2016
https://doi.org/10.1109/ASPDAC.2016.7428103

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