Cited By
View all- Tseng-Chin Luo Chao MFisher PChun-Ren Kuo (2012)A Novel Design Flow for Dummy Fill Using Boolean Mask OperationsIEEE Transactions on Semiconductor Manufacturing10.1109/TSM.2012.219043125:3(468-479)Online publication date: Aug-2012
Metal filling impact on standard cells: definition of the metal fill corner concept
Authors: 
Laurent Remy, 
Philippe Coll, Fabrice Picot, Philippe Mico, Jean-Michel PortalAuthors Info & Claims
Pages 16 - 21
Abstract
The objective of this paper is to evaluate the delay impact of staggered metal filling (Metal2) on the standard cells and their associated local interconnect (Metal1). A Design Of Experiment (DOE) is used to define a large range of filling pattern shapes and positions. This set of filling patterns is then inserted in a Ring Oscillator (RO). From the filled RO simulations, the RO delay is expressed as a function of the filling pattern features. The maximal timing error between the model and the simulation is 1.3%, validating the model. The filling impact on RO delay magnifies the one introduced by the front-end process variations (PV). Consequently, the filling influence is introduced for the minimal, typical and maximal corners, defined now with Process (P), Voltage (V), Temperature (T) and Filling density (F) characteristics.
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Index Terms
- Metal filling impact on standard cells: definition of the metal fill corner concept
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Published In
September 2008
256 pages
ISBN:9781605582313
DOI:10.1145/1404371
- General Chair:
- Marcelo Lubaszewski,
- Program Chairs:
- Michel Renovell,
- Rajesh Gupta
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Published: 01 September 2008
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SBCCI08: 21st Symposium on Integrated Circuits and System Design
September 1 - 4, 2008
Gramado, Brazil
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View all- Tseng-Chin Luo Chao MFisher PChun-Ren Kuo (2012)A Novel Design Flow for Dummy Fill Using Boolean Mask OperationsIEEE Transactions on Semiconductor Manufacturing10.1109/TSM.2012.219043125:3(468-479)Online publication date: Aug-2012
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