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An adaptive two-level management for the flash translation layer in embedded systems

Published: 05 November 2006 Publication History

Abstract

While the capacity of flash-memory storage systems keeps increasing significantly, effective and efficient management of flash-memory space has become a critical design issue! Different granularities in space management impose different management costs and mapping efficiency. In this paper, we explore an address translation mechanism that can dynamically and adaptively switch between two granularities in the mapping of logical block addresses into physical block addresses in flash memory management. The objective is to provide good performance in address mapping and space utilization and, at the same time, to have the memory space requirements, and the garbage collection overhead under proper management. The experimental results show that the proposed adaptive mechanism could provide significant performance improvement over the well-known coarsegrained management mechanism NFTL (NAND Flash Translation Layer) over realistic workloads.

References

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L. P. Chang and T. W. Kuo, "An Adaptive Stripping Architecture for Flash Memory Storage Systems of Embedded Systems," IEEE Eighth Real-Time and Embedded Technology and Applications Symposium (RTAS), San Jose, USA, Sept 2002.
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  • (2019)Toward Instantaneous Sanitization through Disturbance-induced Errors and Recycling Programming over 3D Flash Memory2019 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)10.1109/ICCAD45719.2019.8942084(1-8)Online publication date: Nov-2019
  • (2018)An SLC-Like Programming Scheme for MLC Flash MemoryACM Transactions on Storage10.1145/312925714:1(1-26)Online publication date: 9-Mar-2018
  • (2017)SUPAACM Transactions on Storage10.1145/312990113:4(1-30)Online publication date: 14-Nov-2017
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cover image ACM Conferences
ICCAD '06: Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design
November 2006
147 pages
ISBN:1595933891
DOI:10.1145/1233501
Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Publication History

Published: 05 November 2006

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Author Tags

  1. embedded systems
  2. flash memory
  3. flash translation layer
  4. storage systems

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Overall Acceptance Rate 457 of 1,762 submissions, 26%

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Cited By

View all
  • (2019)Toward Instantaneous Sanitization through Disturbance-induced Errors and Recycling Programming over 3D Flash Memory2019 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)10.1109/ICCAD45719.2019.8942084(1-8)Online publication date: Nov-2019
  • (2018)An SLC-Like Programming Scheme for MLC Flash MemoryACM Transactions on Storage10.1145/312925714:1(1-26)Online publication date: 9-Mar-2018
  • (2017)SUPAACM Transactions on Storage10.1145/312990113:4(1-30)Online publication date: 14-Nov-2017
  • (2017)Durable Address Translation in PCM-Based Flash Storage SystemsIEEE Transactions on Parallel and Distributed Systems10.1109/TPDS.2016.258605928:2(475-490)Online publication date: 1-Feb-2017
  • (2016)I/O scheduling with mapping cache awareness for flash based storage systemsProceedings of the 13th International Conference on Embedded Software10.1145/2968478.2968503(1-10)Online publication date: 1-Oct-2016
  • (2016)Image-Content-Aware I/O Optimization for Mobile VirtualizationACM Transactions on Embedded Computing Systems10.1145/295005916:1(1-24)Online publication date: 13-Oct-2016
  • (2016)A Real-Time Flash Translation Layer for NAND Flash Memory Storage SystemsIEEE Transactions on Multi-Scale Computing Systems10.1109/TMSCS.2016.25160152:1(17-29)Online publication date: 1-Jan-2016
  • (2016)Disturbance Relaxation for 3D Flash MemoryIEEE Transactions on Computers10.1109/TC.2015.245166065:5(1467-1483)Online publication date: 1-May-2016
  • (2016)Capacity-Independent Address Mapping for Flash Storage Devices with Explosively Growing CapacityIEEE Transactions on Computers10.1109/TC.2015.242870265:2(448-465)Online publication date: 1-Feb-2016
  • (2016)Relay-based key management to support secure deletion for resource-constrained flash-memory storage devices2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC)10.1109/ASPDAC.2016.7428052(444-449)Online publication date: Jan-2016
  • Show More Cited By

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