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IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor
The Institute of Electronics, Information and Communication Engineers">Hsuan-I PANChern-Lin CHEN
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2008 Volume E91.C Issue 8 Pages 1356-1364

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Abstract

In this paper, a new compensation scheme and a corre-sponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5V/150mA LDO has been implemented using a 0.5-μm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33μF and no ESR.

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© 2008 The Institute of Electronics, Information and Communication Engineers
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