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Memory leads the way to better computing

Nature Nanotechnology volume 10, pages 191–194 (2015)Cite this article

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A Correction to this article was published on 05 August 2015

This article has been updated

New non-volatile memory devices store information using different physical mechanisms from those employed in today's memories and could achieve substantial improvements in computing performance and energy efficiency.

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Figure 1: Memory hierarchy and various memory types.
Figure 2: A comparison of a key attribute (write energy versus device size) of emerging non-volatile memories.
Figure 3: Monolithic 3D integration of memory interleaved with logic computation layers.

Change history

  • 08 July 2015

    In this Commentary originally published, in Fig. 2 all data for STT-MRAM were too low by a factor of 10, and the lowermost data point for RRAM was a miscalculation of the original data in A. Chen, et al. IEDM 746–749 (2005); it should have appeared at 900 nm2, 12 pJ. Corrected in the online versions.

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Acknowledgements

The authors acknowledge support from the National Science Foundation Center for Energy Efficient Electronics Science, STARnet FAME, LEAST, and SONIC Centers, IARPA, and member companies of the Stanford Non-Volatile Memory Technology Initiative (NMTRI) and the Stanford SystemX Alliance. Discussions with S. Mitra, M. Sabry, C. Kozyrakis, K. Olukotun, L. Pileggi, F. Franchetti, J. Rabaey and J. Bokor, as well as technical assistance from our students are gratefully acknowledged.

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Authors and Affiliations

  1. H.-S. Philip Wong is in the Department of Electrical Engineering and the Stanford SystemX Alliance, Stanford University, Stanford, California 94305, USA,

    H.-S. Philip Wong

  2. Sayeef Salahuddin is in the Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA,

    Sayeef Salahuddin

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  1. H.-S. Philip Wong
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Correspondence to H.-S. Philip Wong or Sayeef Salahuddin.

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Wong, HS., Salahuddin, S. Memory leads the way to better computing. Nature Nanotech 10, 191–194 (2015). https://doi.org/10.1038/nnano.2015.29

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