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Acknowledgements
This work was supported in part by National Key Research and Development Program of China (Grant No. 2021YFB3601900), Fundamental Research Plan (Grant No. JCKY2020110B010), Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174001), National Science Fund for Distinguished Young Scholars (Grant No. 61925404), and Guangdong Basic and Applied Basic Research Foundation (Grant No. 2020A1515110316).
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Fan, Y., Liu, X., Huang, R. et al. High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation. Sci. China Inf. Sci. 66, 229404 (2023). https://doi.org/10.1007/s11432-022-3707-2
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DOI: https://doi.org/10.1007/s11432-022-3707-2