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A Complementary Patch Loaded Epsilon Negative Artificial Material to Facilitate Miniaturization of S-Band Microwave Devices

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Abstract

The epsilon negative materials are found to have applications in the sensor development and microwave device integration for their performance enhancement. However, their existence for S-band operation suffers from relatively large size, the characterization with the bigger dimensions waveguide or horn, and improper permeability (μ < 0) at few spectral frequencies. In this paper, a compact unit-cell design of the complementary square patch loaded artificial material is presented which exhibits a perfect epsilon negative response with μ > 0 in the microwave S-band. The numerical analysis was validated by fabricating the unit-cell structure on a Rogers isotropic thermoset microwave material of relative permittivity ɛr = 12.85 and measuring its scattering parameters spectra using 50 Ω subminiature version-A elongated probe tapping and coupling method. The measured resonance of the transmission and reflection magnitude at 2.64 GHz and 2.85 GHz show a close matching with the simulated results. The material medium parameters of the unit-cell were calculated and verified. The applicability of the proposed epsilon negative unit-cell is shown by loading it in a two-port 50 Ω microstrip line, which then excites a stop-band resonance and yet maintains a low-profile. Therefore, such an artificial material may be used to facilitate miniaturization in the microwave circuit devices.

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Acknowledgements

The authors thank to the Electronics Engineering Department, Sardar Vallabhbhai National Institute of Technology, for providing the measurement facility. They also thank Rogers Corporation, USA, for providing the free sample (TMM-13i). A special thanks to the Technical Quality Education Program, Phase-II (TEQIP-II), SVNIT-Surat, Department of Science and Technology (DST), Ministry of Human Resource and Development (MHRD), India, and Ministry of Electronics and Information Technology, Government of India which is being implemented by Digital India Corporation (formerly Media Lab Asia) for supporting this research work.

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  1. Electronic Engineering Department, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat, 395007, India

    Ratnesh Kumari, Rahul Yadav & Piyush N. Patel

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  1. Ratnesh Kumari
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Correspondence to Ratnesh Kumari.

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Kumari, R., Yadav, R. & Patel, P.N. A Complementary Patch Loaded Epsilon Negative Artificial Material to Facilitate Miniaturization of S-Band Microwave Devices. Wireless Pers Commun 107, 923–938 (2019). https://doi.org/10.1007/s11277-019-06309-x

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