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ZnO based surface acoustic wave ultraviolet photo sensor

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Abstract

Ultraviolet (UV) sensor based on ZnO thin film surface acoustic wave (SAW) device is reported. ZnO films were grown using an RF magnetron sputtering technique. SAW devices were made using such ZnO films exhibiting a central frequency at ∼41.2 MHz. The SAW UV sensor was fabricated by depositing a 70 nm thin photoconducting ZnO overlayer on the fabricated SAW device. The SAW UV sensor was found to exhibit interesting photoresponse behavior to UV illumination, and a downshift in frequency of ∼45 kHz, and a change in insertion loss ∼1.1 dB were observed under UV illumination intensity of 19 mW/cm2. The changes in the frequency of operation and the insertion loss have been attributed to the acoustoelectric interaction between the photogenerated charge carriers and the potential associated with the acoustic waves. Results show the promise of ZnO for the fabrication of low cost wireless SAW UV sensors.

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Acknowledgments

SK is thankful to BK 21 for the financial support. RPT acknowledges the financial support extended by University of Delhi and University Grant Commission (UGC). GHK is grateful to the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R01-2006-000-10065-0).

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Correspondence to Sanjeev Kumar.

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Kumar, S., Kim, GH., Sreenivas, K. et al. ZnO based surface acoustic wave ultraviolet photo sensor. J Electroceram 22, 198–202 (2009). https://doi.org/10.1007/s10832-007-9409-7

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  • DOI: https://doi.org/10.1007/s10832-007-9409-7

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