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Multi-VDD Testing for Analog Circuits

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Abstract

We present industrial results of a quiescent current testing technique suitable for RF testing. The operational method consists of ramping the power supply and of observing the corresponding quiescent current signatures. When the power supply is swept, all transistors are forced into various regions of operation. This has as advantage that the detection of faults is done for multiple supply voltages and corresponding quiescent currents, enhancing in this form the detectability of faults. We found that this method of structural testing yields fault coverage results comparable to functional RF tests making it a potential and attractive technique for production wafer testing due to its low cost, low testing times and low frequency requirements.

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Correspondence to José Pineda de Gyvez.

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José Pineda de Gyvez received the Ph.D. degree from the Eindhoven University of Technology. He is currently a principal scientist at Philips Research Laboratories, The Netherlands. Dr. Pineda was Associate Editor in IEEE Transactions on Circuits and Systems Part I and also Associate Editor for Technology in IEEE Transactions on Semiconductor Manufacturing. His research interests are in the general areas of design for manufacturability and analog signal processing.

Guido Gronthoud received the electrical engineering degree from the Delft University in 1975. From 1976 to 1980 he worked at the Delft University on the design of Microwave systems. From 1980 he works with Philips. He has been working in the fields of circuit simulation and modelling for IC designs, CAD development for PCB design and electronic circuits and systems reliability. Since 1998 he is working on test innovation of digital and mixed-signal circuits. His interests are Defect Oriented Test, fault modeling and Process Related Test. He has authored and co-authored technical papers.

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de Gyvez, J.P., Gronthoud, G. & Amine, R. Multi-VDD Testing for Analog Circuits. J Electron Test 21, 311–322 (2005). https://doi.org/10.1007/s10836-005-6360-x

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  • DOI: https://doi.org/10.1007/s10836-005-6360-x

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