Summary
In this work a filter-less vertical integrated RGB color sensor fabricated in a 90 nm CMOS technology is presented. The sensor is built up of three vertically stacked pn junctions and uses the effect of different penetration depths in silicon for different wavelengths to determine the color of the incident light.
Zusammenfassung
In dieser Arbeit wird ein filterloser, vertikaler, integrierter RGB-Farbsensor, hergestellt in einer 90-nm-CMOS-Technologie, vorgestellt. Der Sensor besteht aus drei vertikal übereinander liegenden pn-Übergängen und nutzt zur Bestimmung der Lichtfarbe die Tatsache, dass Licht unterschiedlicher Wellenlänge unterschiedlich tief in Silizium eindringt.
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Schneider-Hornstein, K., Polzer, A., Dong, J. et al. Filterloser, vertikaler, integrierter RGB-Farbsensor in Deep-Sub-µm-CMOS-Technologie. Elektrotech. Inftech. 128, 348–351 (2011). https://doi.org/10.1007/s00502-011-0044-2
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DOI: https://doi.org/10.1007/s00502-011-0044-2