[go: up one dir, main page]
More Web Proxy on the site http://driver.im/ Skip to main content
Springer Nature Link
Log in

Spatially resolved photoresponse measurements on pentacene thin-film transistors

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

A confocal setup with a spatial resolution in the submicron regime is employed for investigating the response of pentacene transistors to local illumination. The transistors show enhanced and inhomogeneous photoresponse in the proximity of the hole-injecting contact. These inhomogeneities represent contact areas of varying injection efficiency. Thus, this technique allows imaging of contact efficiencies with submicron resolution over large areas up to hundreds of microns. Drift–diffusion simulations including a photogeneration/recombination process have been performed to model the photoresponse. The simulations illustrate that the potential drop along the channel is dramatically reduced in the illuminated area due to photoconductance (i.e. photoinjection of excitons and subsequent dissociation). Also, the injection barrier for holes is reduced if the illumination is close to the hole-injecting electrode. The rapid decay of the photoresponse with increasing distance to the positively biased electrode is caused by the limited electron mean free path in our devices.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
£29.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or eBook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price includes VAT (United Kingdom)

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C.D. Dimitrakopoulos, P.R.L. Malenfant, Adv. Mater. 14, 99 (2002)

    Article  Google Scholar 

  2. G. Horowitz, Adv. Mater. 10, 365 (1998)

    Article  Google Scholar 

  3. Y.M. Sun, Y.Q. Liu, D. Zhu, J. Mater. Chem. 15, 53 (2005)

    Article  Google Scholar 

  4. I. Yagi, K. Tsukagoshi, Y. Aoyagi, Appl. Phys. Lett. 84, 813 (2004)

    Article  ADS  Google Scholar 

  5. P.V. Pesavento, R.J. Chesterfield, C.R. Newman, C.D. Frisbie, J. Appl. Phys. 96, 312 (2004)

    Article  Google Scholar 

  6. H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou, C.D. Sheraw, J.A. Nichols, T.N. Jackson, Solid-State Electron. 47, 297 (2003)

    Article  ADS  Google Scholar 

  7. P.V. Necliudov, M.S. Shur, D.J. Gundlach, T.N. Jackson, Solid-State Electron. 47, 259 (2003)

    Article  ADS  Google Scholar 

  8. I. Kymissis, C.D. Dimitrakopoulos, S. Purushothaman, IEEE Trans. Electron Devices 48, 1060 (2001)

    Article  ADS  Google Scholar 

  9. T. Muck, J. Fritz, V. Wagner, Appl. Phys. Lett. 86, 232101 (2005)

    Article  ADS  Google Scholar 

  10. N. Yoneya, M. Noda, N. Hirai, K. Nomoto, M. Wada, J. Kasahara, Appl. Phys. Lett. 85, 4663 (2004)

    Article  ADS  Google Scholar 

  11. T. Agostinelli, M. Caironi, D. Natali, M. Sampietro, P. Biagioni, M. Finazzi, L. Duo, J. Appl. Phys. 101, 114504 (2007)

    Article  ADS  Google Scholar 

  12. A. Maliakal, K. Raghavachari, H. Katz, E. Chandross, T. Siegrist, Chem. Mater. 16, 4980 (2004)

    Article  Google Scholar 

  13. J. Lee, S.S. Kim, K. Kim, J.H. Kim, S. Im, Appl. Phys. Lett. 84, 1701 (2004)

    Article  ADS  Google Scholar 

  14. C. Meyer, O. Sqalli, H. Lorenz, K. Karrai, Rev. Sci. Instrum. 76, 063706 (2005)

    Article  ADS  Google Scholar 

  15. R. Ruiz, A.C. Mayer, G.G. Malliaras, B. Nickel, G. Scoles, A. Kazimirov, H. Kim, R.L. Headrick, Z. Islam, Appl. Phys. Lett. 85, 4926 (2004)

    Article  ADS  Google Scholar 

  16. A. Di Carlo, F. Piacenza, A. Bolognesi, B. Stadlober, H. Maresch, Appl. Phys. Lett. 86, 263501 (2005)

    Article  ADS  Google Scholar 

  17. O. Mitrofanov, D.V. Lang, C. Kloc, J.M. Wikberg, T. Siegrist, W.-Y. So, M.A. Sergent, A.P. Ramirez, Phys. Rev. Lett. 97, 166601 (2006)

    Article  ADS  Google Scholar 

  18. D.J. Gundlach, L. Zhou, J.A. Nichols, T.N. Jackson, P.V. Necliudov, M.S. Shur, J. Appl. Phys. 100, 024509 (2006)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department für Physik and CeNS, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, 80539, München, Germany

    M. Fiebig, M. Göllner & B. Nickel

  2. Institute for Nanoelectronics, Technische Universität München, Arcisstrasse 21, 80333, München, Germany

    C. Erlen & P. Lugli

Authors
  1. M. Fiebig
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. C. Erlen
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. Göllner
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. P. Lugli
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. B. Nickel
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to B. Nickel.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Fiebig, M., Erlen, C., Göllner, M. et al. Spatially resolved photoresponse measurements on pentacene thin-film transistors. Appl. Phys. A 95, 113–117 (2009). https://doi.org/10.1007/s00339-008-5009-x

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-008-5009-x

PACS

Search

Navigation