Abstract
Ultrafine SiC powders have been synthesized from elemental silicon and methane using induction plasma technology. The powder products were characterized by X-ray diffraction, thermogravimetric analysis, scanning and transmission electron microscopy, electron probe microanalysis, infrared spectroscopy, and surface area measurement. The powders collected from various sections of the reactor system showed different features reflecting different compositions and powder morphologies. The purest SiC powder was collected in the metallic filter. It was composed of both α-and β-phase of SiC with small levels of free silicon and carbon. The reaction route used is based on the evaporation of the injected pure silicon starting powder, followed by carburization of the silicon vapour using methane. The silicon evaporation rate was found to depend strongly on the particle size of the silicon powder. Using silicon powder with a mean particle diameter of 100 μm, at a plasma power level of P=43.2 kW, the conversion of silicon to SiC and the overall SiC content in the product powder was 44.2% and 50.8 wt%, respectively. The injection probe position was Z=9.3 cm, the silicon feed rate was 4 g min−1, and the C/Si molar ratio was 0.7. Using silicon particles with a mean diameter of 45 μm, the conversion and overall content of SiC increased to 70.4% and 73.9 wt%, respectively, under the same plasma operating conditions and powder feed rates. By appropriate selection of experimental conditions, ultrafine SiC powder of high quality was achieved.
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C. M. Hollabaugh, D. E. Hull, L. R. Newkirk and J. J. Petrovic, J. Mater. Sci. 18 (1983) 3190.
G. J. Vogt, R. S. Vigil, L. R. Newkirk and M. Trkula, in Proceedings of the 7th International Symposium on Plasma Chemistry, Eindhoven, The Netherlands, July 1985, edited by C. J. Timmermans (IUPAC, Eindhoven, 1985) pp. 668–73.
Y. Suyama, R. M. Marra, J. S. Haggerty and H. K. Bowen, Am. Ceram. Soc. Bull. 64 (1985) 1356.
M. V. Hoesslin, R. Koch, J. H. Schafer, J. Uhlenbusch and W. Viol in Proceedings of 9th International Symposium on Plasma Chemistry, Pugnochiuso, Italy, September 1989, edited by R. d'Agostino (IUPAS, 1989) p. 854.
L. Chen, T. Goto and T. Hirai, J. Mater. Sci. 24 (1989) 3824.
R. M. Salinger, Ind. Eng. Chem. Prod. Res. Develop. 11 (1972) 230.
J. Y. Guo and G. L. Zheng, Eng. Chem. Metall. 12 (1991) 1.
M. Endo, T. Sano, N. Urasato and M. Shiraishi, Yogyo-Kyokai-Shi (Jpn), 95 (1987) 104.
A. Mitsui and A. Kato, Yogyo Kyokaishi 94 (1986) 517.
T. Kameyama, K. Sakanaka, A. Motoe, T. Tsunoda, T. Nakanaga, N. I. Wakayama, H. Takeo and K. Fukuda, J. Mater. Sci. 25 (1990) 1058.
H. J. Lee, K. Equchi and T. Yoshida, J. Am. Ceram.Soc. 73 (1990) 3356.
H. R. Baumagartner and B. R. Rossing, in “Ceramic Transaction”, Vol. 2, “Silicon Carbide '87”, edited by J. D. Cawley and C. E. Semler (American Ceramic Society, Westervine, OH, 1989) pp. 3–16.
P. H. Rieth, J. S. Reed and A. W. Naumann, Am.Ceram. Soc. Bull. 55 (1976) 713.
G. C. Wei, Am. Ceram. Soc. 66 (1983) C111.
K. M. Rigtrup and R. A. Cutler, in “Silicon Carbide '87”, “Ceramic Transaction”, Vol. 2 edited by J. D. Cawley and C. E. Semler (American Ceramic Society, Westerville, OH, 1989) pp. 17–33.
O. Yamada, Y. Miyamoto and M. Koizumi, J. Mater. Res. 1 (1986) 275.
Y. Ando, M. Ohkohchi and R. Uyeda, Jpn J. Appl. Phys. 19 (1980) L693.
P. C. Kong, T. T. Huang and E. Pfender, in Proceedings of the International Symposium on Plasma Chemistry, Montreal, Canada, July 1983, edited by M. I. Boulos and R. J. Wlunz (IUPC, 1983) pp. 219–224.
P. Kong, R. M. Young, T. T. Huang and E. Pfender, in Proceedings of the 7th International Symposium on Plasma Chemistry Eindhoven, The Netherlands, July 1985, edited by C. J. Timmermans (IUPAC, Eindhoven, 1985) pp. 674–9.
K. Tanaka, K. Ishizaki, S. Yumoto, T. Egashira and M. Uda, J. Mater. Sci. 22 (1987) 2192.
K. Ishizaki, S. Yumoto and K. Tanaka, J. Mater. Sci. 23 (1988) 1813.
Y. Inoue, Y. Nariki and K. Tanaka, J. Mater. Sci. 24 (1989) 3819.
C. B. Laflamme, Doctoral thesis, University of Sherbrooke, August 1991.
C. R. Veale, “Fine powders-preparation, properties and uses” (Halsted Press, Wiley, New York, 1972) p. 42.
P. Proulx, J. T. Mostaghimi and M. I. Boulos, Int.J. Heat Mass Transfer 28 (1985) 1327.
Idem, Plasma Chem. Plasma Process. 7 (1987).
J. G. Sheek and J. D. Cawley, in “Ceramic Transaction”, Vol. 2 “Silicon Carbide '87”, edited by J. D. Cawley and C. E. Semler (American Ceramic Society, Westerville, OH, 1989) pp. 47–61.
G. Ramis, P. Quintard, M. Cauchetier, G. Busca and V. Lorenzelli, J. Am. Ceram. Soc. 72 (1989)1692.
G. L. Zheng and J. Y. Guo, in Proceedings of 8th International Symposium on Plasma Chemistry, Tokyo, Japan, August 1987, edited by K. Akashi and A. Kinbara (IUPAC, 1987) p. 2081.
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Guo, J.Y., Gitzhofer, F. & Boulos, M.I. Induction plasma synthesis of ultrafine SiC powders from silicon and CH4 . JOURNAL OF MATERIALS SCIENCE 30, 5589–5599 (1995). https://doi.org/10.1007/BF00356691
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DOI: https://doi.org/10.1007/BF00356691