A Ring-VCO-Based Injection-Locked Frequency Multiplier with Novel Pulse Generation Technique in 65nm CMOS

Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies

Sangyeop LEE, Norifumi KANEMARU, Sho IKEDA, Tatsuya KAMIMURA, Satoru TANOI, Hiroyuki ITO, Noboru ISHIHARA, Kazuya MASU

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Keywords: injection locked frequency multiplier, ring VCO, pulse injection, CMOS

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2012 Volume E95.C Issue 10 Pages 1589-1597

DOI https://doi.org/10.1587/transele.E95.C.1589

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Abstract

This paper proposes a low-phase-noise ring-VCO-based frequency multiplier with a new subharmonic direct injection locking technique that only uses a time-delay cell and four MOS transistors. Since the proposed technique behaves as an exclusive OR and can double the reference signal frequency, it increases phase correction points and achieves low phase noise characteristic across the wide output frequency range. The frequency multiplier was fabricated by using 65nm Si CMOS process. Measured 1-MHz-offset phase noise at 6.34GHz with reference signals of 528MHz was -119dBc/Hz.

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