Room-Temperature Atomic Layer Deposition of SnO<sub>2</sub> Using Tetramethyltin and Its Application to TFT Fabrication

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Room-Temperature Atomic Layer Deposition of SnO₂ Using Tetramethyltin and Its Application to TFT Fabrication

Kentaro TOKORO, Shunsuke SAITO, Kensaku KANOMATA, Masanori MIURA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE

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Keywords: ALD, SnO₂, IR absorption spectroscopy, TFT

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2018 Volume E101.C Issue 5 Pages 317-322

DOI https://doi.org/10.1587/transele.E101.C.317

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Abstract

We report room-temperature atomic layer deposition (ALD) of SnO₂ using tetramethyltin (TMT) as a precursor and plasma-excited humidified argon as an oxidizing gas and investigate the saturation behaviors of these gases on SnO₂-covered Si prisms by IR absorption spectroscopy to determine optimal precursor/oxidizer injection conditions. TMT is demonstrated to adsorb on the SnO₂ surface by reacting with surface OH groups, which are regenerated by oxidizing the TMT-saturated surface by plasma-excited humidified argon. We provide a detailed discussion of the growth mechanism. We also report the RT ALD application to the RT TFT fabrication.

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