Room temperature operation of 1.55µm wavelength-range GaN/AlN quantum well intersubband photodetectors

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Hiroyuki Uchida, Satoshi Matsui, Petter Holmström, Akihiko Kikuchi, Katsumi Kishino

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Keywords: GaN/AlN, intersubband, quantum well, photodetector, optical communication wavelength, nitride

JOURNAL FREE ACCESS

2005 Volume 2 Issue 22 Pages 566-571

DOI https://doi.org/10.1587/elex.2.566

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Abstract

The room-temperature operation of a GaN/AlN quantum well infrared photodetector (QWIP) using the intersubband transition (ISBT) in a GaN/AlN multiple quantum well (MQW) was demonstrated for the first time. The GaN/AlN QWIP was operated under DC biasing with a vertically conductive geometry to the MQW layer. A clear photoinduced response was observed for P polarized 1.47µm light irradiation. Dependencies of the photoresponse on the applied DC bias voltage, and the polarization and wavelength of incident light were evaluated for the GaN/AlN QWIP. The maximum responsivity was estimated to be 0.11mA/W for a DC bias of 15V at room temperature.

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