This paper experimentally studies the temperature dependencies of current-voltage (I-V) and capacitance-voltage (C-V) characteristics of SiC power devices, and discusses the relationships between physical phenomena and the measured characteristics in SiC. Two SiC Schottky barrier diodes (SBD) with different specifications were studied for temperatures ranging from 25 to 450°C. Their I-V characteristics show that SBDs indeed function as rectifiers at extremely high temperatures, but forward conduction and reverse blocking performance significantly deteriorates when the temperature exceeds 200°C. C-V characteristics show diffusion potential reduction with temperature, and p-n junction characteristics were found for the junction barrier Schottky structure.