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Quasi-epitaxial growth of BaTiS3 films

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Abstract

Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band-gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential applications of these materials. We report growth of quasi-epitaxial thin films of quasi-one-dimensional hexagonal chalcogenide BaTiS3 by pulsed laser deposition. Optimal growth conditions were identified by varying the substrate temperature and H2S partial pressure and their effects on the film structure were examined. High-resolution thin film X-ray diffraction shows strong out-of-plane texture, whereas no evidence of in-plane relationship between the film and the substrate is observed. Grazing incidence wide-angle X-ray scattering and scanning transmission electron microscopy studies reveal the presence of weak epitaxial relationships of the film and the substrate, despite a defective interface. Our study opens up a pathway to realize quasi-1D hexagonal chalcogenide thin films and their heterostructures with perovskite chalcogenides.

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Acknowledgments

This work was supported in part by the Army Research Office under Award No. W911NF-19-1-0137, an ARO MURI program with award no. W911NF-21-1-0327, the National Science Foundation of the United States under grant numbers DMR-2122070 and DMR-2122071, and an Air Force Office of Scientific Research grant no. FA9550-22-1-0117. STEM characterization was conducted at the Center for Nanophase Materials Sciences at Oak Ridge National Laboratory (ORNL), which is a Department of Energy (DOE) Office of Science User Facility, through a user project (G.D.R. and R.M.). The work of HPT processing at Oregon State University was supported by the National Science Foundation of the United States under Grant No. DMR-1810343. The authors gratefully acknowledge the use of facilities at the Core Center for Excellence in Nano Imaging at University of Southern California for the results reported in this manuscript.

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Authors and Affiliations

  1. Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, CA, 90089, USA

    Mythili Surendran, Boyang Zhao, Shantanu Singh, Huandong Chen & Jayakanth Ravichandran

  2. Core Center of Excellence in Nano Imaging, University of Southern California, 1002 West Childs Way, MCB Building, Los Angeles, CA, 90089, USA

    Mythili Surendran, Amir Avishai & Jayakanth Ravichandran

  3. Institute of Materials Science & Engineering, Washington University in St. Louis, One Brookings Drive, St. Louis, MO, 63130, USA

    Guodong Ren & Rohan Mishra

  4. School of Mechanical, Industrial & Manufacturing Engineering, Oregon State University, 306 Dearborn, Corvallis, OR, 97331, USA

    Jae-Kyung Han & Megumi Kawasaki

  5. Department of Mechanical Engineering & Materials Science, Washington University in St. Louis, One Brookings Drive, St. Louis, MO, 63130, USA

    Rohan Mishra

  6. Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, 925 Bloom Walk, Los Angeles, CA, 90089, USA

    Jayakanth Ravichandran

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  1. Mythili Surendran
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Correspondence to Jayakanth Ravichandran.

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Surendran, M., Zhao, B., Ren, G. et al. Quasi-epitaxial growth of BaTiS3 films. Journal of Materials Research 37, 3481–3490 (2022). https://doi.org/10.1557/s43578-022-00776-y

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