Abstract
Hydrogen termination of diamond lowers its ionization energy, driving electron transfer from the valence band into an adsorbed water layer or to a strong molecular acceptor. This gives rise to p-type surface conductivity with holes confined to a subsurface layer of a few nanometers thickness. The transfer doping mechanism, the electronic behavior of the resulting hole accumulation layer, and the development of robust field-effect transistor (FET) devices using this platform are reviewed. An alternative method of modulating the hole carrier density has been developed based upon an electrolyte-gate architecture. The operation of the reswulting solution-gated FET architecture in two contemporary applications will be described: the charge state control of nitrogen-vacancy centers in diamond and biosensing. Despite 25 years of work in this area, our knowledge of surface conductivity of diamond continues to develop.
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Pakes, C.I., Garrido, J.A. & Kawarada, H. Diamond surface conductivity: Properties, devices, and sensors. MRS Bulletin 39, 542–548 (2014). https://doi.org/10.1557/mrs.2014.95
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DOI: https://doi.org/10.1557/mrs.2014.95