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2020 – today
- 2024
- [c11]Cristina Maurette-Blasini, Dirk Schwantuschke, Sayed Ali Albahrani, Peter Brückner, Konstantin Kuliabin, Sébastien Chartier, Rüdiger Quay:
ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies. BCICTS 2024: 62-65 - [c10]Matthias Sinnwell
, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay:
Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. DRC 2024: 1-2 - [c9]Bharath Cimbili, Mingquan Bao, Christian Friesicke, Rüdiger Quay:
32.5 E-band (71-to-86GHz) GaN Power Amplifier with 4.37W Output Power and 18.5% PAE for 5G Backhaul. ISSCC 2024: 528-530 - 2023
- [j14]Stefan Moench
Three-Phase Motor Inverter and Current Sensing GaN Power IC. Sensors 23(14): 6512 (2023) - [c8]Cristina Maurette-Blasini, Rainer Weber, Sandrine Wagner, Dirk Schwantuschke, Sébastien Chartier, Rüdiger Quay
Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications. BCICTS 2023: 288-291 - [c7]Matthias Sinnwell
Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz. DRC 2023: 1-2 - [c6]Sebastian Krause
X-Band 100-W High-Voltage GaN Internally Matched FET with Low Gain Compression. IGARSS 2023: 4617-4620 - 2021
- [j13]Michael Basler
Building Blocks for GaN Power Integration. IEEE Access 9: 163122-163137 (2021) - 2020
- [c5]Tobias Kemmer
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. IRPS 2020: 1-6
2010 – 2019
- 2018
- [j12]Maximilian Dammann, Martina Baeumler, Peter Brückner
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectron. Reliab. 88-90: 385-388 (2018) - 2017
- [j11]Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. Microelectron. Reliab. 76-77: 292-297 (2017) - 2016
- [c4]Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Erdin Ture
Performance of tri-gate AlGaN/GaN HEMTs. ESSDERC 2016: 176-179 - 2015
- [j10]Maximilian Dammann, Martina Baeumler, Peter Brückner
Degradation of 0.25 μm GaN HEMTs under high temperature stress test. Microelectron. Reliab. 55(9-10): 1667-1671 (2015) - [c3]Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs. IRPS 2015: 2 - [c2]Saqib Kaleem, Jutta Kuhn, Rüdiger Quay
A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC. RWS 2015: 132-134 - 2014
- [j9]Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. Microelectron. Reliab. 54(12): 2656-2661 (2014) - 2011
- [j8]M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. Microelectron. Reliab. 51(2): 224-228 (2011) - [c1]Patrick Jueschke, Dirk Wiegner, Gerhard Luz, R. Machinal, Andreas Pascht, Rüdiger Quay
Multiband Doherty RF power amplifier. AFRICON 2011: 1-5 - 2010
- [j7]Stephan Maroldt, Dirk Wiegner, Stanislav Vitanov, Vassil Palankovski, Rüdiger Quay
Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz. IEICE Trans. Electron. 93-C(8): 1238-1244 (2010)
2000 – 2009
- 2009
- [j6]Maximilian Dammann, W. Pletschen, Patrick Waltereit
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectron. Reliab. 49(5): 474-477 (2009) - 2006
- [j5]Rachid Driad, Robert E. Makon, Karl Schneider, Ulrich Nowotny, Rolf Aidam, Rüdiger Quay
InP DHBT Based IC Technology for over 80 Gbit/s Data Communications. IEICE Trans. Electron. 89-C(7): 931-936 (2006) - [j4]Robert E. Makon, Rachid Driad, Karl Schneider, Manfred Ludwig, Rolf Aidam, Rüdiger Quay
InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s. IEEE J. Solid State Circuits 41(10): 2215-2223 (2006) - 2004
- [j3]Maximilian Dammann, Arnulf Leuther, Rüdiger Quay
Reliability of 70 nm metamorphic HEMTs. Microelectron. Reliab. 44(6): 939-943 (2004) - 2003
- [j2]Alexandre Bessemoulin, Rüdiger Quay
A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE. IEEE J. Solid State Circuits 38(9): 1433-1437 (2003) - 2001
- [j1]Vassil Palankovski, Rüdiger Quay
Industrial application of heterostructure device simulation. IEEE J. Solid State Circuits 36(9): 1365-1370 (2001)
Coauthor Index
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