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Andreas Graff
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2020 – today
- 2021
- [c4]Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, Sebastian Krause
, Andreas Graff, Michél Simon-Najasek:
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress. IRPS 2021: 1-7 - 2020
- [c3]Enrico Zanoni
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. IRPS 2020: 1-10
2010 – 2019
- 2018
- [j7]Maximilian Dammann, Martina Baeumler, Peter Brückner
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectron. Reliab. 88-90: 385-388 (2018) - [c2]Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann
Physical failure analysis methods for wide band gap semiconductor devices. IRPS 2018: 3 - [c1]C. Monachon, Marcin Stefan Zielinski, J. Berney
Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices. IRPS 2018: 6 - 2017
- [j6]Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. Microelectron. Reliab. 76-77: 292-297 (2017) - [j5]Andreas Graff, Michél Simon-Najasek, Frank Altmann
High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. Microelectron. Reliab. 76-77: 338-343 (2017) - 2016
- [j4]Mikael Broas, Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann
Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. Microelectron. Reliab. 64: 541-546 (2016) - 2015
- [j3]Maximilian Dammann, Martina Baeumler, Peter Brückner
Degradation of 0.25 μm GaN HEMTs under high temperature stress test. Microelectron. Reliab. 55(9-10): 1667-1671 (2015) - 2014
- [j2]Michél Simon-Najasek, Susanne Hübner, Frank Altmann
Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures. Microelectron. Reliab. 54(9-10): 1785-1789 (2014) - [j1]Benjamin März
Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials. Microelectron. Reliab. 54(9-10): 2000-2005 (2014)
Coauthor Index
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