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Francesco Iannuzzo
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2020 – today
- 2024
- [j67]Cao Zhan
, Lingyu Zhu
Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests. IEEE Trans. Ind. Electron. 71(11): 15012-15023 (2024) - 2023
- [j66]Cao Zhan
Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMC-HVdc Application Considering Bidirectional Power Transfer. IEEE Trans. Ind. Electron. 70(7): 7290-7300 (2023) - [c7]Rand AL Mdanat
Optimization of a Bidirectional Boost Converter for Nanogrid Applications. IAS 2023: 1-8 - 2022
- [j65]Qiang Wang
Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules. IEEE Access 10: 35605-35619 (2022) - 2021
- [j64]Tomàs Lledó-Ponsati
Effect of Current Distortion and Unbalanced Loads on Semiconductors Reliability. IEEE Access 9: 162660-162670 (2021) - 2020
- [j63]Keting Hu
Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches. IEEE Access 8: 89988-90022 (2020)
2010 – 2019
- 2019
- [j62]Nick Baker
The Temperature Dependence of the Flatband Voltage in High-Power IGBTs. IEEE Trans. Ind. Electron. 66(7): 5581-5584 (2019) - 2018
- [j61]Mauro Ciappa, Paolo Cova, Gaudenzio Meneghesso, Francesco Iannuzzo
Editorial. Microelectron. Reliab. 88-90: 1 (2018) - [j60]Nick Baker, Francesco Iannuzzo
Smart SiC MOSFET accelerated lifetime testing. Microelectron. Reliab. 88-90: 43-47 (2018) - [j59]Amir Sajjad Bahman
Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses. Microelectron. Reliab. 88-90: 304-308 (2018) - [j58]Keting Hu, Zhigang Liu
Simple and effective open switch fault diagnosis of single-phase PWM rectifier. Microelectron. Reliab. 88-90: 423-427 (2018) - [j57]Pooya Davari, O. Kristensen, Francesco Iannuzzo
Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging. Microelectron. Reliab. 88-90: 545-549 (2018) - [j56]Haoze Luo
On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition. Microelectron. Reliab. 88-90: 563-567 (2018) - [j55]Paula Diaz Reigosa
Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs. Microelectron. Reliab. 88-90: 577-583 (2018) - [j54]Lorenzo Ceccarelli
Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter. Microelectron. Reliab. 88-90: 627-630 (2018) - [j53]H. Du
Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. Microelectron. Reliab. 88-90: 661-665 (2018) - [j52]Ui-Min Choi, Søren Jørgensen, Francesco Iannuzzo
Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings. Microelectron. Reliab. 88-90: 788-794 (2018) - [j51]Mohsen Akbari
Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions. Microelectron. Reliab. 88-90: 1135-1140 (2018) - [j50]Haoze Luo
Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules. IEEE Trans. Ind. Electron. 65(6): 4724-4738 (2018) - 2017
- [j49]Amir Sajjad Bahman
Reliability-oriented environmental thermal stress analysis of fuses in power electronics. Microelectron. Reliab. 76-77: 25-30 (2017) - [j48]Haoze Luo
Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design. Microelectron. Reliab. 76-77: 123-130 (2017) - [j47]Lorenzo Ceccarelli
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis. Microelectron. Reliab. 76-77: 272-276 (2017) - [j46]Kristian Bonderup Pedersen
Wire bond degradation under thermo- and pure mechanical loading. Microelectron. Reliab. 76-77: 373-377 (2017) - [j45]Haoze Luo
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules. Microelectron. Reliab. 76-77: 415-419 (2017) - [j44]Paula Diaz Reigosa
Capacitive effects in IGBTs limiting their reliability under short circuit. Microelectron. Reliab. 76-77: 485-489 (2017) - [j43]Ui-Min Choi, Frede Blaabjerg, Francesco Iannuzzo
Advanced power cycler with intelligent monitoring strategy of IGBT module under test. Microelectron. Reliab. 76-77: 522-526 (2017) - [c6]Haoze Luo, Francesco Iannuzzo
Separation test method for investigation of current density effects on bond wires of SiC power MOSFET modules. IECON 2017: 1525-1530 - [c5]Alessandro Soldati
Active thermal control by controlled shoot-through of power devices. IECON 2017: 4363-4368 - [c4]Lorenzo Ceccarelli
Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions. IECON 2017: 4879-4884 - [c3]Alessandro Soldati
Active thermal control for reliability improvement of MOS-gated power devices. IECON 2017: 7935-7940 - 2016
- [j42]Francesco Iannuzzo
Reliability issues in power electronics. Microelectron. Reliab. 58: 1-2 (2016) - [j41]Haoze Luo
Modern IGBT gate driving methods for enhancing reliability of high-power converters - An overview. Microelectron. Reliab. 58: 141-150 (2016) - [j40]Ui-Min Choi, Frede Blaabjerg
Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations. Microelectron. Reliab. 64: 403-408 (2016) - [j39]Amir Sajjad Bahman
Mission-profile-based stress analysis of bond-wires in SiC power modules. Microelectron. Reliab. 64: 419-424 (2016) - [j38]Paula Diaz Reigosa, Daniel Prindle, Gontran Pâques
Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT. Microelectron. Reliab. 64: 524-529 (2016) - 2015
- [j37]Carmine Abbate, Giovanni Busatto
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. Microelectron. Reliab. 55(9-10): 1496-1500 (2015) - [j36]Paula Diaz Reigosa, Rui Wu, Francesco Iannuzzo
Robustness of MW-Level IGBT modules against gate oscillations under short circuit events. Microelectron. Reliab. 55(9-10): 1950-1955 (2015) - [j35]Ui-Min Choi, Frede Blaabjerg
Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation. Microelectron. Reliab. 55(9-10): 2022-2026 (2015) - 2014
- [j34]Carmine Abbate, Francesco Iannuzzo
Turn-off instabilities in large area IGBTs. Microelectron. Reliab. 54(9-10): 1927-1934 (2014) - [j33]Carmine Abbate, Giovanni Busatto
Thermal damage in SiC Schottky diodes induced by SE heavy ions. Microelectron. Reliab. 54(9-10): 2200-2206 (2014) - [c2]Rui Wu, Liudmila Smirnova, Francesco Iannuzzo
Investigation on the short-circuit behavior of an aged IGBT module through a 6 kA/1.1 kV non-destructive testing equipment. IECON 2014: 3367-3373 - 2013
- [j32]Carmine Abbate, Francesco Iannuzzo
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs. Microelectron. Reliab. 53(9-11): 1481-1485 (2013) - [j31]Carmine Abbate, Giovanni Busatto
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. Microelectron. Reliab. 53(9-11): 1707-1712 (2013) - [c1]Rui Wu, Frede Blaabjerg
Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview. IECON 2013: 507-513 - 2012
- [j30]Mauro Ciappa, Paolo Cova
Editorial. Microelectron. Reliab. 52(9-10): 1751-1752 (2012) - [j29]Giovanni Busatto
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. Microelectron. Reliab. 52(9-10): 2363-2367 (2012) - [j28]Carmine Abbate, Giovanni Busatto
Unclamped repetitive stress on 1200 V normally-off SiC JFETs. Microelectron. Reliab. 52(9-10): 2420-2425 (2012) - [j27]Stefania Baccaro, Giovanni Busatto
Reliability oriented design of power supplies for high energy physics applications. Microelectron. Reliab. 52(9-10): 2465-2470 (2012) - 2011
- [j26]Carmine Abbate, Giovanni Busatto
Operation of SiC normally-off JFET at the edges of its safe operating area. Microelectron. Reliab. 51(9-11): 1767-1772 (2011) - [j25]Giovanni Busatto
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. Microelectron. Reliab. 51(9-11): 1995-1998 (2011) - 2010
- [j24]Giovanni Busatto
Editorial. Microelectron. Reliab. 50(9-11): 1191-1192 (2010) - [j23]Carmine Abbate, Giovanni Busatto
IGBT RBSOA non-destructive testing methods: Analysis and discussion. Microelectron. Reliab. 50(9-11): 1731-1737 (2010) - [j22]Giovanni Busatto
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectron. Reliab. 50(9-11): 1842-1847 (2010)
2000 – 2009
- 2009
- [j21]Giovanni Busatto
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectron. Reliab. 49(9-11): 1033-1037 (2009) - [j20]Giovanni Busatto
Instable mechanisms during unclamped operation of high power IGBT modules. Microelectron. Reliab. 49(9-11): 1363-1369 (2009) - 2008
- [j19]Giovanni Busatto
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectron. Reliab. 48(8-9): 1306-1309 (2008) - [j18]Giovanni Busatto
IGBT modules robustness during turn-off commutation. Microelectron. Reliab. 48(8-9): 1435-1439 (2008) - [j17]Francesco Iannuzzo
High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs. Microelectron. Reliab. 48(8-9): 1449-1452 (2008) - [j16]Francesco Iannuzzo
Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost-Effective FPGAs. IEEE Trans. Ind. Electron. 55(4): 1519-1526 (2008) - 2007
- [j15]Carmine Abbate, Giovanni Busatto
The robustness of series-connected high power IGBT modules. Microelectron. Reliab. 47(9-11): 1746-1750 (2007) - 2006
- [j14]Francesco Iannuzzo
Investigation of MOSFET failure in soft-switching conditions. Microelectron. Reliab. 46(9-11): 1790-1794 (2006) - [j13]Carmine Abbate, Giovanni Busatto
The high frequency behaviour of high voltage and current IGBT modules. Microelectron. Reliab. 46(9-11): 1848-1853 (2006) - [j12]Giovanni Busatto
Experimental study of power MOSFET's gate damage in radiation environment. Microelectron. Reliab. 46(9-11): 1854-1857 (2006) - 2005
- [j11]Giovanni Busatto
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectron. Reliab. 45(9-11): 1711-1716 (2005) - [j10]Francesco Iannuzzo
Non-destructive Testing Technique for MOSFET's Characterisation during Soft-Switching ZVS Operations. Microelectron. Reliab. 45(9-11): 1738-1741 (2005) - 2004
- [j9]Francesco Velardi, Francesco Iannuzzo
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. Microelectron. Reliab. 44(9-11): 1407-1411 (2004) - [j8]Giovanni Busatto
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications. Microelectron. Reliab. 44(9-11): 1443-1448 (2004) - 2003
- [j7]Francesco Velardi, Francesco Iannuzzo
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact, . Microelectron. Reliab. 43(4): 549-555 (2003) - [j6]Giovanni Busatto
MAGFET based current sensing for power integrated circuit. Microelectron. Reliab. 43(4): 577-583 (2003) - [j5]Francesco Velardi, Francesco Iannuzzo
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectron. Reliab. 43(9-11): 1847-1851 (2003) - [j4]Giovanni Busatto
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. Microelectron. Reliab. 43(9-11): 1907-1912 (2003) - 2002
- [j3]Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Kaminksy:
The Reliability of New Generation Power MOSFETs in Radiation Environment. Microelectron. Reliab. 42(9-11): 1629-1634 (2002) - [j2]Giovanni Busatto, B. Cascone, Luigi Fratelli
Non-destructive high temperature characterisation of high-voltage IGBTs. Microelectron. Reliab. 42(9-11): 1635-1640 (2002) - 2001
- [j1]Giovanni Busatto
Non-destructive tester for single event burnout of power diodes. Microelectron. Reliab. 41(9-10): 1725-1729 (2001)
Coauthor Index
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