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Thomas Zimmer
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2020 – today
- 2024
- [c23]Pascal Chevalier, Florian Cacho, C. Durand, N. Derrier, V. Millon, Frederic Monsieur, A. Gauthier, P. Billy, Sébastien Fregonese, Thomas Zimmer, H. Audouin, Michel Buczko, Didier Céli, C. Deglise-Favre, Cheikh Diouf, O. Foissey, M. Hello, N. Guitard, S. Madassamy, S. Ramirez-Ruiz, C. Renard, F. Sonnerat, V. Yon, D. Gloria, G. Waltisperger:
A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications. BCICTS 2024: 13-17 - [c22]Markus Müller, Sébastien Fregonese, Christoph Weimer, Guangsheng Liang, Xiaodi Jin, Maximilian Froitzheim, Thomas Zimmer, Michael Schröter:
On the Safe Operating Area of InP HBTs. BCICTS 2024: 290-293 - 2023
- [c21]Thomas Zimmer, Sébastien Fregonese, Anjan Chakravorty:
Electro-Thermal Investigation of SiGe HBTs: A Review. BCICTS 2023: 44-49 - 2021
- [c20]Sébastien Fregonese, Chhandak Mukherjee, Holger Rücker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng
, Marine Couret
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance. BCICTS 2021: 1-7
2010 – 2019
- 2019
- [c19]Mathieu Jaoul, Didier Céli, Cristell Maneux, Thomas Zimmer:
Measurement based accurate definition of the SOA edges for SiGe HBTs. BCICTS 2019: 1-4 - [c18]Soumya Ranjan Panda, Sébastien Fregonese, Anjan Chakravorty, Thomas Zimmer:
TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range. BCICTS 2019: 1-4 - [c17]Bishwadeep Saha, Sébastien Frégonese, Soumya Ranjan Panda, Anjan Chakravorty, Didier Céli, Thomas Zimmer:
Collector-substrate modeling of SiGe HBTs up to THz range. BCICTS 2019: 1-4 - 2018
- [j21]Philipp Hillger
A 128-Pixel System-on-a-Chip for Real-Time Super-Resolution Terahertz Near-Field Imaging. IEEE J. Solid State Circuits 53(12): 3599-3612 (2018) - [c16]D. Fadi, Wei Wei, Emiliano Pallecchi, M. Anderson, J. Stake, Marina Deng
2D RF Electronics: from devices to circuits - challenges and applications. DRC 2018: 1-2 - [c15]Philipp Hillger, Ritesh Jain
A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS. ISSCC 2018: 418-420 - 2017
- [j20]C. Mukherjee
Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit. Microelectron. Reliab. 73: 146-152 (2017) - [j19]Pascal Chevalier
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105(6): 1035-1050 (2017) - [c14]J. Bazzi, H. Kassem, Arnaud Curutchet, Franck Pourchon, N. Derrier, Didier Céli, Thomas Zimmer:
A two-step de-embedding method valid up to 110 GHz. ICM 2017: 1-4 - 2016
- [c13]Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee
Physics-based electrical compact model for monolayer Graphene FETs. ESSDERC 2016: 240-243 - [c12]C. Mukherjee
Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations. ESSDERC 2016: 260-263 - 2015
- [j18]Thomas Zimmer:
From the eScience Project Chair. Int. J. Interact. Mob. Technol. 9(2): 4 (2015) - [j17]Thomas Zimmer, Michel Billaud, M. Pic, Didier Geoffroy:
Remote Lab Experiments in Electronics for Use and Reuse. Int. J. Interact. Mob. Technol. 9(2): 13-16 (2015) - [j16]Thomas Jacquet
Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit. Microelectron. Reliab. 55(9-10): 1433-1437 (2015) - [c11]C. Mukherjee
Characterization and modeling of low-frequency noise in CVD-grown graphene FETs. ESSDERC 2015: 176-179 - [c10]Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee
A new physics-based compact model for Bilayer Graphene Field-Effect Transistors. ESSDERC 2015: 180-183 - [c9]Thomas Zimmer, Michel Billaud, Emmanouil D. Fylladitakis
HeliosLab: A remote photovoltaic laboratory. exp.at 2015: 52-55 - [c8]Sébastien Fregonese, Jorgue Daniel Aguirre Morales, Magali De Matos, Cristell Maneux
Graphene FET evaluation for RF and mmWave circuit applications. ISCAS 2015: 2920-2923 - [c7]Sébastien Fregonese, Rosario D'Esposito, Magali De Matos, Andreas Kohler, Cristell Maneux
Substrate-coupling effect in BiCMOS technology for millimeter wave applications. NEWCAS 2015: 1-4 - 2014
- [j15]Thomas Zimmer:
TEMPUS Project eSience. Int. J. Online Eng. 10(5): 4 (2014) - [j14]Thrasyvoulos Tsiatsos, Stella Douka, Apostolos Mavridis
Evaluation Plan and Preliminary Evaluation of a Network of Remote Labs in the Maghrebian Countries. Int. J. Online Eng. 10(5): 15-20 (2014) - [c6]C. Mukherjee
Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation. ESSDERC 2014: 305-308 - 2012
- [j13]Tushar Gupta, Clement Bertolini, Olivier Héron, Nicolas Ventroux, Thomas Zimmer, François Marc:
Impact of Power Consumption and Temperature on Processor Lifetime Reliability. J. Low Power Electron. 8(1): 83-94 (2012) - [c5]Mario Weis, Sébastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux
Pulsed I(V) - pulsed RF measurement system for microwave device characterization with 80ns/45GHz. ESSDERC 2012: 189-192 - 2011
- [j12]G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, Cristell Maneux
Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses. Microelectron. Reliab. 51(9-11): 1730-1735 (2011) - [j11]Sudip Ghosh
Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design. Microelectron. Reliab. 51(9-11): 1736-1741 (2011) - [j10]Si-Yu Liao, Jean-Marie Retrouvey, Guillaume Agnus, Weisheng Zhao, Cristell Maneux
Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices. IEEE Trans. Circuits Syst. I Regul. Pap. 58-I(9): 2172-2181 (2011) - 2010
- [j9]G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, Cristell Maneux
Preliminary results of storage accelerated aging test on InP/InGaAs DHBT. Microelectron. Reliab. 50(9-11): 1548-1553 (2010) - [j8]Sudip Ghosh
Thermal aging model of InP/InGaAs/InP DHBT. Microelectron. Reliab. 50(9-11): 1554-1558 (2010) - [c4]Sébastien Fregonese, Cristell Maneux
From nanoscale technology scenarios to compact device models for ambipolar devices. ICECS 2010: 57-61 - [c3]Tushar Gupta, Clement Bertolini, Olivier Héron, Nicolas Ventroux, Thomas Zimmer, François Marc:
High Level Power and Energy Exploration Using ArchC. SBAC-PAD 2010: 25-32
2000 – 2009
- 2009
- [j7]Noëlle Lewis, Michel Billaud, Didier Geoffroy, Philippe Cazenave, Thomas Zimmer:
A Distance Measurement Platform Dedicated to Electrical Engineering. IEEE Trans. Learn. Technol. 2(4): 312-319 (2009) - 2007
- [j6]Thomas Zimmer, Michel Billaud, Didier Geoffroy:
Integration of remote lab exercises into standard course packages. Int. J. Online Eng. 3(3) (2007) - [j5]Ian O'Connor
CNTFET Modeling and Reconfigurable Logic-Circuit Design. IEEE Trans. Circuits Syst. I Regul. Pap. 54-I(11): 2365-2379 (2007) - 2006
- [j4]Didier Geoffroy, Thomas Zimmer, Michel Billaud:
A remote laboratory for electrical engineering education. Int. J. Online Eng. 2(3) (2006) - 2005
- [j3]Yvan Maidon, Thomas Zimmer, André Ivanov:
An Analog Circuit Fault Characterization Methodology. J. Electron. Test. 21(2): 127-134 (2005) - 2004
- [j2]Hassène Mnif, Thomas Zimmer, Jean Luc Battaglia
Representation of the SiGe HBT's thermal impedance by linear and recursive networks. Microelectron. Reliab. 44(6): 945-950 (2004) - [j1]Brice Grandchamp, Cristell Maneux
On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise. Microelectron. Reliab. 44(9-11): 1387-1392 (2004)
1990 – 1999
- 1999
- [c2]Thomas Zimmer, Noëlle Milet-Lewis, Ahmed Fakhfakh, B. Ardouin, Hervé Levi, J. B. Duluc, Pascal Fouillat:
Hierarchical Analogue Design and Behavioural Modelling. MSE 1999: 59-60 - 1997
- [c1]Thomas Zimmer, Patrice Kadionik, Yves Danto:
A World-Wide-Web based instrumentation pool real testing in a virtual world. MSE 1997: 114-115
Coauthor Index
aka: Sébastien Frégonese
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