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Laurent Grenouillet
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2020 – today
- 2024
- [c20]Olivier Billoint, Simon Martin, J. Laguerre, L. Hosier, Jean Coignus, Catherine Carabasse, François Andrieu, Laurent Grenouillet:
Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations. IMW 2024: 1-4 - [c19]J. Laguerre, Simon Martin, Jean Coignus, Catherine Carabasse, Marc Bocquet, François Andrieu, Laurent Grenouillet:
Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays. IRPS 2024: 1-7 - [c18]Lucas Rhetat, Jean-Philippe Noel, Bastien Giraud, Laurent Grenouillet, Julie Laguerre, Cédric Marchand, Ian O'Connor:
A Novel Design Technique for Enhanced Security and New Applications of Ferroelectric-Based Non-Volatile SRAM. VLSI-SoC 2024: 1-6 - 2023
- [c17]J. Laguerre, Marc Bocquet, Olivier Billoint, Simon Martin, Jean Coignus
, Catherine Carabasse, Thomas Magis, T. Dewolf, François Andrieu, Laurent Grenouillet:
Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes. IMW 2023: 1-4 - [c16]Vivek Parmar, Sandeep Kaur Kingra, Deepak Verma, Digamber Pandey, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Pares, Laurent Grenouillet, Jean-François Nodin, Manan Suri:
Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array. IMW 2023: 1-4 - [c15]Laurent Grenouillet, Justine Barbot, J. Laguerre, Simon Martin, Catherine Carabasse, M. Louro, Messaoud Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, Thomas Magis, Carine Jahan, François Andrieu, Jean Coignus
Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited). IRPS 2023: 1-8 - [c14]Joel Minguet Lopez, Manon Dampfhoffer
1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation. MIXDES 2023: 1-6 - [c13]Jean-Philippe Noël, Emanuele Valea
Compute-In-Place Serial FeRAM: Enhancing Performance, Efficiency and Adaptability in Critical Embedded Systems. VLSI-SoC 2023: 1-6 - [i2]Simone D'Agostino, Filippo Moro, Tristan Torchet, Yigit Demirag, Laurent Grenouillet, Giacomo Indiveri, Elisa Vianello, Melika Payvand:
DenRAM: Neuromorphic Dendritic Architecture with RRAM for Efficient Temporal Processing with Delays. CoRR abs/2312.08960 (2023) - 2022
- [c12]Justine Barbot, Jean Coignus
Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements. ESSCIRC 2022: 125-128 - [c11]Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability. IMW 2022: 1-4 - [c10]Joel Minguet Lopez, François Rummens, Lucas Reganaz, A. Heraud, Tifenn Hirtzlin, Laurent Grenouillet, Gabriele Navarro
1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing. IMW 2022: 1-4 - [c9]Gabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle
High temperature stability embedded ReRAM for 2x nm node and beyond. IMW 2022: 1-4 - 2021
- [c8]Riccardo Fontanini, Justine Barbot, Mattia Segatto
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions. ESSDERC 2021: 255-258 - [c7]Laurent Grenouillet, Niccolo Castellani, Alain Persico, Valentina Meli, Simon Martin, Olivier Billoint, R. Segaud, Stefania Bernasconi, C. Pellissier, Carine Jahan, Christelle Charpin-Nicolle, P. Dezest, Catherine Carabasse, Paul Besombes, Sebastien Ricavy, N. P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, Thomas Magis, Messaoud Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, Elisa Vianello, Gabriel Molas, Fred Gaillard, Julien Arcamone, Etienne Nowak
16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. IMW 2021: 1-4 - [c6]Joel Minguet Lopez, Niccolo Castellani, Laurent Grenouillet, Lucas Reganaz, Gabriele Navarro
Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays. IMW 2021: 1-4 - [c5]Joel Minguet Lopez, Lucas Hudeley, Laurent Grenouillet, Diego Alfaro Robayo, Jury Sandrini, Gabriele Navarro
Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization. IRPS 2021: 1-6 - [c4]Erika Covi
Ferroelectric Tunneling Junctions for Edge Computing. ISCAS 2021: 1-5 - [i1]Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philipp Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck:
Ferroelectric Tunneling Junctions for Edge Computing. CoRR abs/2107.01853 (2021)
2010 – 2019
- 2016
- [c3]M. Barlas, Boubacar Traore, Laurent Grenouillet, Stefania Bernasconi, Philippe Blaise, Mouhamad Alayan, Benoit Sklénard, Eric Jalaguier, Philippe Rodriguez
Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. ESSDERC 2016: 168-171 - 2012
- [c2]Ali Khaki-Firooz, Kangguo Cheng, Qing Liu, Toshiharu Nagumo, Nicolas Loubet, Alexander Reznicek, James Kuss, J. Gimbert, Raghavasimhan Sreenivasan, Maud Vinet, Laurent Grenouillet, Yannick Le Tiec, Romain Wacquez, Z. Ren, J. Cai, Davood Shahrjerdi, Prasanna Kulkarni, Shom Ponoth, Scott Luning, Bruce Doris:
Extremely thin SOI for system-on-chip applications. CICC 2012: 1-4 - [c1]Maud Vinet, T. Hook, Yannick Le Tiec, R. Murphy, Shom Ponoth, Laurent Grenouillet, Romain Wacquez:
Variability in Fully Depleted MOSFETs. ICICDT 2012: 1-3
Coauthor Index
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