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"Study of the stability of e-mode GaN HEMTs with p-GaN gate based on ..."

Isabella Rossetto et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.07.127

access: closed

type: Journal Article

metadata version: 2024-05-07

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Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni:
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectron. Reliab. 64: 547-551 (2016)

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