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"Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications."

Antonio Stocco et al. (2014)

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DOI: 10.1016/J.MICROREL.2014.07.075

access: closed

type: Journal Article

metadata version: 2024-05-07

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Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. Microelectron. Reliab. 54(9-10): 2237-2241 (2014)

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