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"PMOSFET anti-fuse using GIDL-induced-HEIP mechanism."

J. Y. Seo et al. (2010)

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DOI: 10.1016/J.MICROREL.2010.07.053

access: closed

type: Journal Article

metadata version: 2020-02-22

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J. Y. Seo, J. E. Seok, W. S. Kim, N. H. Cha, J. S. Kang, B. S. So:
PMOSFET anti-fuse using GIDL-induced-HEIP mechanism. Microelectron. Reliab. 50(9-11): 1309-1311 (2010)

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