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"Atomic-layer-deposited silicon-nitride/SiO2 stack--a highly ..."

Anri Nakajima et al. (2002)

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DOI: 10.1016/S0026-2714(02)00095-1

access: closed

type: Journal Article

metadata version: 2020-02-22

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Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto, Shin Yokoyama:
Atomic-layer-deposited silicon-nitride/SiO₂ stack--a highly potential gate dielectrics for advanced CMOS technology. Microelectron. Reliab. 42(12): 1823-1835 (2002)

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