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"Traps centers and deep defects contribution in current instabilities for ..."

Nabil Sghaier et al. (2006)

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DOI: 10.1016/J.MEJO.2005.05.014

access: closed

type: Journal Article

metadata version: 2023-09-30

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Nabil Sghaier, M'Hamed Trabelsi, Noureddine Yacoubi, Jean-Marie Bluet, Abdelkader Souifi, Gérard Guillot, Christophe Gaquière, J. C. DeJaeger:
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectron. J. 37(4): 363-370 (2006)

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