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"Investigation of negative DIBL effect for ferroelectric-based FETs to ..."

Weixing Huang et al. (2021)

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DOI: 10.1016/J.MEJO.2021.105110

access: closed

type: Journal Article

metadata version: 2022-10-02

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Weixing Huang, Huilong Zhu, Yongkui Zhang, Zhenhua Wu, Kunpeng Jia, Xiaogen Yin, Yangyang Li, Chen Li, Xuezheng Ai, Qiang Huo, Junfeng Li:
Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits. Microelectron. J. 114: 105110 (2021)

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